β-Ga2O3-Based Power Devices: A Concise Review
Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …
generation wide bandgap semiconductor, owing to its natural physical and chemical …
Review on interface engineering of low leakage current and on-resistance for high-efficiency Ga2O3-based power devices
Abstract Beta-Gallium oxide (β-Ga 2 O 3) has emerged as a very feasible semiconductor
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …
material for new explorations, thanks to its advantages of ultra-wide bandgap and diverse …
A Comprehensive Review on Recent Developments in Ohmic and Schottky Contacts on Ga2O3 for Device Applications
Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …
Effects of Cu, Ag and Au on electronic and optical properties of α-Ga2O3 oxide according to first-principles calculations
Y Pan - Journal of Physics and Chemistry of Solids, 2023 - Elsevier
Ga 2 O 3 is a promising semiconductor material, but, improving its electronic and optical
properties is important for the development of semiconductor materials. To improve the …
properties is important for the development of semiconductor materials. To improve the …
Over 1.8 GW/cm2 beveled-mesa NiO/β-Ga2O3 heterojunction diode with 800 V/10 A nanosecond switching capability
In this Letter, we demonstrate a large-area (1-mm 2) beveled-mesa p-NiO/β-Ga 2 O 3 bipolar
heterojunction diode (HJD) with a high Baliga's figure of merit of 1.84 (2.87) GW/cm 2 from …
heterojunction diode (HJD) with a high Baliga's figure of merit of 1.84 (2.87) GW/cm 2 from …
Normally-off β-Ga2O3 Power Heterojunction Field-Effect-Transistor Realized by p-NiO and Recessed-Gate
In this work, we designed and fabricated a p-NiO gate heterojunction field effect transistor
(HJFET) with gate-recessed architecture based on β-Ga 2 O 3. The gate recess process was …
(HJFET) with gate-recessed architecture based on β-Ga 2 O 3. The gate recess process was …
Demonstration of β-Ga2O3 Heterojunction Gate Field-Effect Rectifier
In this work, a-Ga 2 O 3 field-effect rectifier (FER) with a p-NiO x gate aimed at low
conduction loss, low leakage current, and capability of on-chip integration has been …
conduction loss, low leakage current, and capability of on-chip integration has been …
Low Reverse Conduction Loss β-Ga2O3 Vertical FinFET With an Integrated Fin Diode
Y Wei, X Peng, Z Jiang, T Sun, J Wei… - … on Electron Devices, 2023 - ieeexplore.ieee.org
In this work, a reverse conduction beta-phase gallium oxide (-Ga 2 O 3 vertical FinFET with
an integrated Fin diode (FD) is proposed to improve reverse conduction characteristics with …
an integrated Fin diode (FD) is proposed to improve reverse conduction characteristics with …
Nonuniform Mechanism for Positive and Negative Bias Stress Instability in β-Ga2O3 MOSFET
Z Jiang, J Wei, Y Lv, Y Wei, Y Wang… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, we experimentally study the instability of the key electrical characteristic for the
fabricated-Ga2O3 MOSFET under positive bias stress (PBS) and negative bias stress (NBS) …
fabricated-Ga2O3 MOSFET under positive bias stress (PBS) and negative bias stress (NBS) …
[HTML][HTML] Optimization of normally-off β-Ga2O3 MOSFET with high Ion and BFOM: A TCAD study
A combination of recessed-gate and gate-field plate in lateral β-Ga 2 O 3 metal–oxide–
semiconductor field-effect transistor (MOSFET) is proposed in the Technology Computer …
semiconductor field-effect transistor (MOSFET) is proposed in the Technology Computer …