Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array

S De, F Müller, N Laleni, M Lederer… - IEEE Electron …, 2022 - ieeexplore.ieee.org
This letter reports a linear multiply-accumulate (MAC) operation conducted on a crossbar
memory array based on 28nm high-k metal gate (HKMG) Complementary Metal Oxide …

Interfacial layer engineering to enhance noise immunity of fefets for imc applications

Y Raffel, S Thunder, M Lederer, R Olivo… - … Conference on IC …, 2022 - ieeexplore.ieee.org
This article reports an improvement in the low-frequency noise characteristics in hafnium
oxide-based (HfO 2) ferroelectric field-effect transistors (FeFET) by interfacial layer (IL) …

Effect of Al2O3 interlayers on the microstructure and electrical response of ferroelectric doped HfO2 thin films

M Lederer, K Seidel, R Olivo, T Kämpfe… - Frontiers in …, 2022 - frontiersin.org
Novel devices based on ferroelectric hafnium oxide comply with the increasing demand for
highly scalable embedded non-volatile memory devices, especially for in-memory …

Monolithic-3D inference engine with IGZO based ferroelectric thin film transistor synapses

S De, M Lederer, Y Raffel, D Lehninger, S Thunder… - Authorea …, 2023 - techrxiv.org
Instigated by the plethora of data generated by edge devices and IoT devices, machine
learning has become the de facto choice of everyone for solving many tasks. Applications …

[PDF][PDF] Material development of doped hafnium oxide for non-volatile ferroelectric memory application

M Lederer - 2022 - researchgate.net
The discovery of ferroelectricity in hafnium oxide spurred a growing research eld due to
hafnium oxides compatibility with processes in microelectronics as well as its unique …

Application of Ferroelectrics: Monolithic‐3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses

S De, M Lederer, Y Raffel, D Lehninger… - Advanced Ultra Low …, 2023 - Wiley Online Library
Instigated by the plethora of data generated by edge devices and IoT devices, machine
learning has become the de facto choice of everyone for solving many tasks. Applications …

[HTML][HTML] Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

A Sünbül, D Lehninger, A Pourjafar, S Yang… - … , Devices, Circuits and …, 2024 - Elsevier
Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage
applications. However, it has some reliability limitations such as imprint and retention …

[图书][B] Electron Devices Based On Ferroelectric Hafnium Oxide Thin Films

T Kämpfe - 2022 - researchgate.net
The discovery of ferroelectric hafnium oxide revived the research on ferroelectric integrated
devices in microelectronics for memory, radio frequency as well as piezoelectric or …

[PDF][PDF] Interfacial Layer Engineering to Enhance Endurance and Noise Immunity of FeFETs for IMC Applications

S De - Authorea Preprints, 2023 - techrxiv.org
This article reports an improvement in the endurance and low-frequency noise
characteristics in hafnium oxide-based (HfO2) ferroelectric field-effect transistors (FeFET) by …