Accurate and computationally efficient modeling of nonquasi static effects in MOSFETs for millimeter-wave applications
A lumped-circuit nonquasi-static (NQS) model, that is applicable for both large-signal
transient simulations and a small-signal ac analysis, is developed in this paper. An improved …
transient simulations and a small-signal ac analysis, is developed in this paper. An improved …
BSIM-BULK: Accurate compact model for analog and RF circuit design
In this work, we present the recent and upcoming enhancements of the industry standard
BSIM-BULK (formerly BSIM6) model. BSIM-BULK is the latest body referenced compact …
BSIM-BULK (formerly BSIM6) model. BSIM-BULK is the latest body referenced compact …
Characterization and global parameter extraction of bulk MOSFETs using BSIM-bulk model
Measurement and scalable modelcard development methodology for 180 nm Bulk MOSFET
technology using BSIM-BULK compact model is presented in this paper. On-wafer device …
technology using BSIM-BULK compact model is presented in this paper. On-wafer device …
Compact Modeling of Drain-Extended MOS Transistor Using BSIM-BULK Model
SS Parihar, R Gurjar - VLSI Design and Test: 23rd International …, 2019 - Springer
The charge based compact model for Drain-Extended MOS (DEMOS) transistor is presented
in this work. Proposed model accurately predicts the special effects of quasi-saturation …
in this work. Proposed model accurately predicts the special effects of quasi-saturation …
UTBB FDSOI mosfet dynamic behavior study and modeling for ultra-low power RF and mm-Wave IC Design
S El Ghouli - 2018 - theses.hal.science
This research work has been motivated primarily by the significant advantages brought
about by the UTBB FDSOI technology to the Low power Analog and RF applications. The …
about by the UTBB FDSOI technology to the Low power Analog and RF applications. The …