Amorphous InGaZnO and metal oxide semiconductor devices: an overview and current status
J Troughton, D Atkinson - Journal of Materials Chemistry C, 2019 - pubs.rsc.org
The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …
semiconductor devices that ranges from displays technology, to clothing and packaging …
Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications
Since the invention of amorphous indium–gallium–zinc–oxide (IGZO) based thin-film
transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have …
transistors (TFTs) by Hideo Hosono in 2004, investigations on the topic of IGZO TFTs have …
Origins of high mobility and low operation voltage of amorphous oxide TFTs: Electronic structure, electron transport, defects and doping
Amorphous oxide semiconductors (AOSs) are expected as new channel materials in thin-
film transistors (TFTs) for large-area and/or flexible flat-panel displays and other giant …
film transistors (TFTs) for large-area and/or flexible flat-panel displays and other giant …
Semiconductor device
S Yamazaki, J Koyama, K Kato - US Patent 8,363,452, 2013 - Google Patents
US8363452B2 - Semiconductor device - Google Patents US8363452B2 - Semiconductor
device - Google Patents Semiconductor device Download PDF Info Publication number …
device - Google Patents Semiconductor device Download PDF Info Publication number …
Large-scale complementary macroelectronics using hybrid integration of carbon nanotubes and IGZO thin-film transistors
Carbon nanotubes and metal oxide semiconductors have emerged as important materials
for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated …
for p-type and n-type thin-film transistors, respectively; however, realizing sophisticated …
Semiconductor device
S Yamazaki - US Patent 10,490,553, 2019 - Google Patents
Disclosed is a semiconductor device capable of functioning as a memory device. The
memory device comprises a plurality of memory cells, and each of the memory cells contains …
memory device comprises a plurality of memory cells, and each of the memory cells contains …
Semiconductor device
S Yamazaki, M Tsubuku, K Noda, K Toyotaka… - US Patent …, 2014 - Google Patents
An object is to provide a memory device including a memory element that can be operated
without problems by a thin film transistor with a low off-state current. Provided is a memory …
without problems by a thin film transistor with a low off-state current. Provided is a memory …
Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
Threshold voltage (V th) stability was examined under constant current stress for a-In–Ga–
Zn–O thin film transistors (TFTs) deposited at room temperature and annealed at 400 C in …
Zn–O thin film transistors (TFTs) deposited at room temperature and annealed at 400 C in …
Semiconductor device
S Yamazaki, J Koyama, K Kato - US Patent 8,559,220, 2013 - Google Patents
GI IC5/02(2006.01)(74) Attorney, Agent, or Firm—Fish & Richardson PC. GI
IC5/06(2006.01)(57) ABSTRACT GI IC5/10(2006.01) GIC II/24(2006.01) The semiconductor …
IC5/06(2006.01)(57) ABSTRACT GI IC5/10(2006.01) GIC II/24(2006.01) The semiconductor …
21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer
H Ohara, T Sasaki, K Noda, S Ito… - … Symposium Digest of …, 2009 - Wiley Online Library
We have developed a 4.0 inch QVGA AMOLED display using amorphous In‐Ga‐Zn‐Oxide
TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to …
TFTs, focusing on a passivation layer. Threshold voltage of the TFTs can be controlled to …