Probing the Nature of Single-Photon Emitters in a WSe2 Monolayer by Magneto-Photoluminescence Spectroscopy
Monolayer transition metal dichalcogenides (TMDs) have emerged as promising materials
to generate single-photon emitters (SPEs). While there are several previous reports in the …
to generate single-photon emitters (SPEs). While there are several previous reports in the …
Experimental and theoretical studies of band gap alignment in GaAs1− xBix/GaAs quantum wells
R Kudrawiec, J Kopaczek, MP Polak… - Journal of Applied …, 2014 - pubs.aip.org
Band gap alignment in GaAs 1− x Bi x/GaAs quantum wells (QWs) was studied
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …
experimentally by photoreflectance (PR) and theoretically, ab initio, within the density …
Theoretical and experimental studies of electronic band structure for GaSb1− xBix in the dilute Bi regime
Photoreflectance (PR) spectroscopy was applied to study the band gap in GaSb 1− x Bi x
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …
alloys with Bi< 5%. Obtained results have been interpreted in the context of ab initio …
[HTML][HTML] Electromodulation spectroscopy of highly mismatched alloys
R Kudrawiec, W Walukiewicz - Journal of Applied Physics, 2019 - pubs.aip.org
The electronic band structure of highly mismatched alloys (HMAs) was very successfully
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …
explored using electromodulation (EM) spectroscopy, ie, photoreflectance (PR) …
Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells
In this work, we investigate correlations between optical and electro-optical properties of
GaAsPN/GaP p–i–n solar cells grown by MBE on GaP (001) substrates. A …
GaAsPN/GaP p–i–n solar cells grown by MBE on GaP (001) substrates. A …
Direct and indirect optical transitions in bulk and atomically thin MoS2 studied by photoreflectance and photoacoustic spectroscopy
Optical transitions in atomically thin MoS 2 samples made by sulfidation of a metallic
molybdenum layer have been studied by photoreflectance (PR) and photoacoustic (PA) …
molybdenum layer have been studied by photoreflectance (PR) and photoacoustic (PA) …
Temperature dependence of the band gap of GaSb1− xBix alloys with 0< x≤ 0.042 determined by photoreflectance
J Kopaczek, R Kudrawiec, WM Linhart… - Applied Physics …, 2013 - pubs.aip.org
GaSb 1− x Bi x layers with 0< x≤ 0.042 have been studied by photoreflectance in 15–290 K
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …
temperature range. We found that due to the incorporation of Bi atoms into the GaSb host …
Localization of electronic states in III-V semiconductor alloys: A comparative study
C Pashartis, O Rubel - Physical Review Applied, 2017 - APS
Electronic properties of III-V semiconductor alloys are examined using first principles, with
the focus on the spatial localization of electronic states. We compare localization at the band …
the focus on the spatial localization of electronic states. We compare localization at the band …
Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study
J Kopaczek, WM Linhart, M Baranowski… - Semiconductor …, 2015 - iopscience.iop.org
Abstract Photoreflectance (PR), photoluminescence (PL) and time-resolved PL were applied
to study the optical properties, particularly the localized and delocalized states and carrier …
to study the optical properties, particularly the localized and delocalized states and carrier …
Electronic band structure of compressively strained Ge1− xSnx with x< 0.11 studied by contactless electroreflectance
Contactless electroreflectance is applied to study direct optical transitions from the heavy
hole, light hole, and spin-orbit split-off band to the conduction band in compressively …
hole, light hole, and spin-orbit split-off band to the conduction band in compressively …