Effects of polarized-induced doping and graded composition in an advanced multiple quantum well InGaN/GaN UV-LED for enhanced light technology
In this paper, a light-emitting diode in the ultra-violet range (UV-LED) with multiple-quantum
wells (MQWs) of InGaN/GaN is designed and analyzed through Technology Computer …
wells (MQWs) of InGaN/GaN is designed and analyzed through Technology Computer …
Light Logic Gates with GaAs‐Based Structures
The novel XOR, OR, and NAND optical logic gates have been investigated using GaAs‐
based Hot Electron Light Emission and Lasing in Semiconductor Heterostructures …
based Hot Electron Light Emission and Lasing in Semiconductor Heterostructures …
A novel InGaN-based bidirectional wavelength converter and optical amplifier based on hot electron-induced blue light-emitting device
In this work, the functioning of the Top-Hat Hot-Electron Light Emission and Lasing in a
Semiconductor Heterostructure (TH-HELLISH) structure, which is based on InGaN/GaN …
Semiconductor Heterostructure (TH-HELLISH) structure, which is based on InGaN/GaN …
Super-radiant surface emission from a quasi-cavity hot electron light emitter
Abstract The Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure
(HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to …
(HELLISH-1) device is a novel surface emitter which utilises hot carrier transport parallel to …
A novel hot carrier-induced blue light-emitting device
In this work, an InGaN/GaN multiple quantum well based Top-Hat Hot-Electron Light
Emission and Lasing in a Semiconductor Heterostructure (Top-Hat HELLISH) is …
Emission and Lasing in a Semiconductor Heterostructure (Top-Hat HELLISH) is …
VCSEL structure hot electron light emitter
N Balkan, A Serpengüzel, A O'Brien-Davies… - Materials Science and …, 2000 - Elsevier
The hot electron light emitting and lasing semiconductor heterostructure vertical cavity
surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel to the …
surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel to the …
Non-linear carrier dynamics in hot electron vertical cavity surface emitting laser
N Balkan - Physica B: Condensed Matter, 1999 - Elsevier
The hot electron light emitting and lasing semiconductor heterostructure (HELLISH) vertical
cavity surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel …
cavity surface emitting lasers (VCSELs) are devices that utilise hot carrier transport parallel …
Gain characteristic of dilute nitride HELLISH‐VCSOA for 1.3 µm wavelength operation
FAI Chaqmaqche, S Mazzucato, N Balkan… - … status solidi c, 2013 - Wiley Online Library
Optical amplification of more than 3 dB is demonstrated using the Hot Electron Light Emitting
and Lasing Semiconductor Heterostructure device in a Vertical Cavity Semiconductor …
and Lasing Semiconductor Heterostructure device in a Vertical Cavity Semiconductor …
Van der Waals Integrated Silicon/Graphene/AlGaN Based Vertical Heterostructured Hot Electron Light Emitting Diodes
Silicon-based light emitting diodes (LED) are indispensable elements for the rapidly growing
field of silicon compatible photonic integration platforms. In the present study, graphene has …
field of silicon compatible photonic integration platforms. In the present study, graphene has …
A tunable hot-electron light emitter
A Teke, R Gupta, N Balkan… - Semiconductor …, 1997 - iopscience.iop.org
We demonstrate the operation of a novel tunable wavelength surface emitting device. The
device is based on a p-GaAs and heterojunction containing an inversion layer on the p-side …
device is based on a p-GaAs and heterojunction containing an inversion layer on the p-side …