Semiconductor Surfaces and Interfaces deals with structural and electronic properties of
semiconductor surfaces and interfaces. The first part introduces the general aspects of …

The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

As a result of considerable progress in microfabrication technology for ultra-large scale
integration (ULSI), it has become necessary to control oxide formation on an atomic scale in …

Amorphous and single-crystal α-SiC were exposed to various oxygen sources at room
temperature. The oxygen sources included the residual gas in an ultrahigh vacuum …

In this review, we try to derive a comprehensive understanding of the transport mechanisms
in three dimensional ensembles of Si quantum dots (QDs) that are embedded in an …

Studies of the interaction of O 2 and O with Si (111) and Si (100) at a fundamental level are
reviewed. Both atomic and molecular chemisorbed species have been found on these …

The growth of ultrathin oxide films by the thermal oxidation of Si (100) at 1020–1170 K and
in 10− 1–10− 3 Torr O 2 pressure has been studied by high-resolution medium-energy ion …

Silicon and its native oxide SiO 2 have been utilized in semiconductor technology since the
1950s and are still crucial for the development of novel device technologies today. Recent …

Silicon dioxide (SiO 2)/silicon carbide (SiC) structures annealed in nitric oxide (NO) and
argon gas ambiences were investigated using x-ray photoelectron spectroscopy (XPS). The …

The reactions of atomic oxygen with the (100) and (111) surfaces of silicon have been
investigated by employing supersonic molecular beam techniques and X-ray photoelectron …