GaN FinFETs and trigate devices for power and RF applications: Review and perspective
Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability
This work describes the high-temperature performance and avalanche capability of normally-
off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors …
off 1.2-K V-CLASS vertical gallium nitride (GaN) fin-channel junction field-effect transistors …
Vertical GaN power devices: Device principles and fabrication technologies—Part II
Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …
devices and systems with higher energy efficiency, higher power density, faster switching …
Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN pn junctions for efficient power devices
We report correlated nanoscale mapping of the structure, composition, and properties of
regrown GaN pn junctions to identify how etching and non-planar regrowth processes limit …
regrown GaN pn junctions to identify how etching and non-planar regrowth processes limit …
Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …
Selective area doping of GaN toward high-power applications
Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …
the realization of advanced device structures for high-power applications, including, but not …
Analysis of vertical GaN JBS and pn diodes by Mg ion implantation and ultrahigh-pressure annealing
SR Stein, D Khachariya, W Mecouch… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We report on vertical GaN junction barrier Schottky (JBS) diodes formed by Mg ion
implantation and ultrahigh-pressure annealing (UHPA). The static ON-state characteristics of …
implantation and ultrahigh-pressure annealing (UHPA). The static ON-state characteristics of …
Study of AlGaN/GaN vertical superjunction HEMT for improvement of breakdown voltage and specific on-resistance
M Zhang, Z Guo, Y Huang, Y Li, J Ma, X Xia… - IEEE …, 2021 - ieeexplore.ieee.org
A GaN-based vertical superjunction high electron mobility transistor (SJ HEMT) with a
composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve …
composite structure (CS-SJ HEMT) is proposed and analyzed by Silvaco TCAD to improve …
Facet control and material redistribution in GaN growth on three-dimensional structures
I Manglano Clavero, C Margenfeld… - Crystal Growth & …, 2022 - ACS Publications
In this work, the influence of temperature and ammonia partial pressure on the GaN shell
morphology grown on GaN microfin cores is investigated. We demonstrate that GaN …
morphology grown on GaN microfin cores is investigated. We demonstrate that GaN …