[HTML][HTML] Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix
A Kole, P Chaudhuri - AIP Advances, 2014 - pubs.aip.org
A moderately low temperature (≤ 800 C) thermal processing technique has been described
for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc …
for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (μc …