Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Abstract 4H-SiC has recently attracted attention as a new power semiconductor material to
replace silicon. One of the challenges impeding its practical use is the elimination of killer …

Four-layer hexagonal silicon carbide (4H-SiC) is a promising material for high-temperature
and radiation-rich environments due to its excellent thermal conductivity and radiation …

Bipolar degradation, which is caused by the expansion of stacking faults (SFs) during
operation, has been a serious issue in 4H-SiC power devices. To evaluate the threshold …

The reliability of 4H-SiC power devices accounts not only to power packages but as well to
SiC materials which contain defects that impact the performance of power converters. A …

Polytypism in SiC has created interest and opportunity for device heterostructures and
bandgap engineering in power electronic applications. As each SiC polytype possesses a …

Recently, power sources that utilize radioisotope energy conversion, specifically the
betavoltaic effect, have gained more attention due to the increasing demand for energy …

It has been a widely growing interest in using silicon carbide (SiC) in high-power electronic
devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and …

Van der Waals (vdW) interactions have recently been demonstrated to have a non-
negligible effect on the theoretical polytype stability and stacking fault energies of SiC …

The characteristic polytype behaviors of SiC and accompanying low stacking fault energies
are known to cause engineering issues, including polytype inclusions and bipolar …