This article reviews and provides physical insights into the anomalous capacitance behavior
of laterally diffused MOS (LDMOS) transistors. It is shown that the modulation of channel/drift …

A BSIM-based compact model for a high-voltage MOSFET is presented. The model uses the
BSIM-BULK (formerly BSIM6) model at its core, which has been extended to include the …

This paper introduces a scalable compact model of lateral double-diffused MOS (LDMOS)
transistors. The new model, ie, the Surface-Potential-based High-Voltage MOS (SP-HV), is …

This paper presents a novel physics-based analytical compact model for the drift region of a
high-voltage metal–oxide–semiconductor field-effect transistor (HV-MOSFET). According to …

Due to the significant advancement of system-on-chip (SoC) based architectures in IC
technology, FinFET-based laterally diffused MOS (LDMOS) FETs are crucial for integrating …

The cryogenic characterization (93 K/-180∘C to 300 K/27 ^∘C) and compact modeling of a
high-voltage (HV) laterally diffused MOS (LDMOS) transistor that exhibits carrier freeze-out …

This article presents PSPHV, a surface-potential-based compact model for laterally diffused
MOS (LDMOS) transistors. PSPHV includes a new drain voltage scaling technique that …

Incorporation of Field Plate in High Electron Mobility Transistors (HEMTs) improves the
device breakdown voltage but on the other hand, increases the device Capacitance. It has a …

In this paper, for the first time, we report a nonmonotonic dependence of the snapback
voltage (V sb) on the buried oxide thickness (tBOX) in silicon-on-insulator laterally double …

In this paper, a high-performance and low-HCI (Hot carrier injection) degradation LDMOS
(Lateral double diffused metal oxide semiconductor) device is introduced. It consists of an …