Recent progress in ammonothermal technology of bulk GaN growth in basic environment is
presented and discussed in this paper. This method enables growth of two-inch in diameter …

Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as
a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently …

We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by
hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates …

In this work, results of structural characterization of high-quality ammonothermal GaN are
presented. Besides expected low dislocation density (being of the order of 103cm− 2) the …

Orthodox etching of HVPE-grown GaN in molten eutectic of KOH+ NaOH (E etch) and in hot
sulfuric and phosphoric acids (HH etch) is discussed in detail. Three size grades of pits are …

We are presenting some physical and chemical basis of ammonothermal method of bulk
gallium nitride (GaN) synthesis in ammonobasic route. The substrates of polar, non‐polar …

In this paper we present progress made recently in the development of the growth of truly
bulk GaN crystals by the ammonothermal method in basic environment. High quality 2-in c …

Dislocations in GaN single crystal were studied by means of spectral cathodoluminescence
(CL) mapping and defect selective etching. We show that the c-type screw dislocations are …

GaN-based optoelectronic and electronic devices such as light-emitting diodes (LEDs),
laser, and heterojunction field-effect transistors (HFETs) typically use material grown on …

Aluminum nitride (AlN) and gallium nitride (GaN) play an essential role in modern
electronics, particularly in optoelectronics. Highly efficient light-emitting devices covering the …