High performance narrow-bandgap GaInNAsSb solar cells are instrumental for the
development of lattice-matched GaAs-based solar cells with more than four junctions. To this …

In this work, we demonstrate the MBE growth of a systematic series of GaAsBi/GaAs multiple
quantum well devices with up to 120 periods and report on their structural and optical …

GaAsPBi is a comparatively novel quaternary III–V compound semiconductor with attractive
properties that suit optoelectronic applications. However, the quaternary compound …

We report on the growth, structural, and optical properties of GaAs/GaAsPBi core–shell
nanowires (NWs) synthesized by molecular beam epitaxy (MBE). The structure presents …

GaAsBi nanowires (NWs) are promising for optoelectronic applications in the near-and mid-
infrared wavelengths due to the optical properties of the Bi-containing compound and the …

GaAsPBi is a novel semiconductor that can broaden the bandgap range of III− V
compounds, but its growth on GaAs (001) by molecular beam epitaxy is complicated by the …

Various structures for bismuth (Bi) incorporated GaAsP have been studied11, 2. Here, we
extend our study to a new III-V-Bi system by investigating the potential to incorporate Bi into …