Polarization-independent perfect absorber enabled by quasibound states in the continuum
Light absorption plays a vital role in governing the performance of optoelectronic devices,
such as solar cells and photodetectors. However, it is quite challenging to realize perfect …
such as solar cells and photodetectors. However, it is quite challenging to realize perfect …
Flexible titanium nitride/germanium-tin photodetectors based on sub-bandgap absorption
S An, Y Liao, M Kim - ACS Applied Materials & Interfaces, 2021 - ACS Publications
We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn)
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …
photodetectors (PDs) with an extended photodetection range based on sub-bandgap …
GeSn lateral pin waveguide photodetectors for mid-infrared integrated photonics
CH Tsai, KC Lin, CY Cheng, KC Lee, HH Cheng… - Optics letters, 2021 - opg.optica.org
In this Letter, we demonstrate mid-infrared (MIR) lateral p− i− n GeSn waveguide
photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key …
photodetectors (WGPDs) on silicon, to the best of our knowledge for the first time, as a key …
High performance pin photodetectors on Ge-on-insulator platform
X Zhao, G Wang, H Lin, Y Du, X Luo, Z Kong, J Su, J Li… - Nanomaterials, 2021 - mdpi.com
In this article, we demonstrated novel methods to improve the performance of pin
photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a …
photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a …
Metal-semiconductor-metal GeSn photodetectors on silicon for short-wave infrared applications
Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic
integration with other optical components of the photonic circuits because of the planar …
integration with other optical components of the photonic circuits because of the planar …
GeSn Waveguide Photodetectors with Vertical p–i–n Heterostructure for Integrated Photonics in the 2 μm Wavelength Band
The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐
generation optical communication. As a result, silicon photonic platforms acquire great …
generation optical communication. As a result, silicon photonic platforms acquire great …
Design and modeling of high-performance DBR-based resonant-cavity-enhanced GeSn photodetector for fiber-optic telecommunication networks
In this work, we present a novel distributed Bragg reflector (DBR)-based resonant-cavity-
enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance …
enhanced (RCE) GeSn photodetector on Si substrates to achieve high-performance …
High-performance Ge Photodetectors on Silicon Photonics Platform for Optical Interconnect
T Yan, L Li, Y Zhang, J Hao, J Meng, N Shi - Sensors and Actuators A …, 2024 - Elsevier
With the rapid development of 5 G communications, artificial intelligence, the Internet of
Things and other fields, the increasing demand for data transmission in communication …
Things and other fields, the increasing demand for data transmission in communication …
Mid-infrared resonant light emission from GeSn resonant-cavity surface-emitting LEDs with a lateral pin structure
CY Chang, PL Yeh, YT Jheng, LY Hsu, KC Lee… - Photonics …, 2022 - opg.optica.org
We demonstrate room-temperature, mid-infrared resonant electroluminescence from GeSn
resonant-cavity LEDs with a lateral pin configuration on a silicon-on-insulator substrate. A …
resonant-cavity LEDs with a lateral pin configuration on a silicon-on-insulator substrate. A …
Optimal design and noise analysis of high-performance DBR-integrated lateral germanium (Ge) photodetectors for SWIR applications
This work presents the high-performance Si/SiO 2 distributed Bragg reflector (DBR)-
integrated lateral germanium (Ge) pin photodetectors (PDs) for atmospheric gas sensing …
integrated lateral germanium (Ge) pin photodetectors (PDs) for atmospheric gas sensing …