No-fault-found and intermittent failures in electronic products

H Qi, S Ganesan, M Pecht - Microelectronics Reliability, 2008 - Elsevier
This paper reviews the possible causes and effects for no-fault-found observations and
intermittent failures in electronic products and summarizes them into cause and effect …

Challenges and developments of copper wire bonding technology

P Liu, L Tong, J Wang, L Shi, H Tang - Microelectronics Reliability, 2012 - Elsevier
Copper wire bonding has been studied for more than two decades. While copper wire
bonding has many advantages over gold wire bonding, many challenges have to be solved …

Chip-last (RDL-first) fan-out panel-level packaging (FOPLP) for heterogeneous integration

JH Lau, CT Ko, CY Peng, KM Yang… - Journal of …, 2020 - meridian.allenpress.com
In this investigation, the chip-last, redistribution-layer (RDL)–first, fan-out panel-level
packaging (FOPLP) for heterogeneous integration is studied. Emphasis is placed on the …

Study of factors affecting the hardness of ball bonds in copper wire bonding

ZW Zhong, HM Ho, YC Tan, WC Tan, HM Goh… - Microelectronic …, 2007 - Elsevier
Copper wire bonding has gained popularity due to its economic advantage and superior
electrical performance. However, copper is harder than gold, and replacing gold wire with …

Transient solid-liquid interfacial reaction between Al wire and Au/Cu pad during parallel gap micro-resistance welding

S Wang, H Zhang, Y Li, W Zhang, C Hang, Y Tian - Materials Letters, 2021 - Elsevier
Reliable bonding of thick Al wires and plated Au pad is important for the packaging of power
modules. The interfacial phases of the Al/Au/Cu joint after parallel gap micro-resistance …

Electromigration effects on compound growth at interfaces

HT Orchard, AL Greer - Applied Physics Letters, 2005 - pubs.aip.org
Interfacial reactions are important in microelectronic devices and can be accelerated or
decelerated by imposing a direct electric current normal to the interface. These effects are …

Investigation of ultrasonic vibrations of wire-bonding capillaries

ZW Zhong, KS Goh - Microelectronics Journal, 2006 - Elsevier
Ultrasonic energy is widely used in wire bonding for microelectronics packaging. It is
necessary to ensure that the maximum ultrasonic vibration displacement occurs at or near …

Real time contact resistance measurement to determine when microwelds start to form during ultrasonic wire bonding

H Seppänen, R Kurppa, A Meriläinen… - Microelectronic …, 2013 - Elsevier
We prove that we can, using contact resistance as a tool, determine the instant when the
bonding process starts, ie microwelds start to form during ultrasonic bonding. This …

[HTML][HTML] Contribution à l'étude de la durée de vie des assemblages de puissance dans des environnements haute température et avec des cycles thermiques de …

L Dupont - 2006 - theses.hal.science
Dans le domaine des applications avioniques, des dispositifs d'électronique de puissance
sont susceptible d'être placés sur le réacteur avec, dans le pire des cas, une température …

[图书][B] Diagnostic des machines électriques

JC Trigeassou - 2011 - books.google.com
Page 1 EGEM Génie électrique Diagnostic des machines électriques sous la direction de
Jean-Claude Trigeassou #ºnse Lavoisier Page 2 Page 3 Diagnostic des machines …