New developments in gas sensing using various two-dimensional architectural designs

S Aftab, MZ Iqbal, S Hussain, HH Hegazy… - Chemical Engineering …, 2023 - Elsevier
Prior to widespread sensor deployments being used to create networks for applications like
fuel-based home appliances, industrial emissions, and vehicle emissions, it is crucial to find …

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

E Elahi, M Ahmad, A Dahshan, M Rabeel, S Saleem… - Nanoscale, 2024 - pubs.rsc.org
Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical
characteristics have attracted significant interest from the scientific and industrial worlds in …

Bipolar junction transistor exhibiting excellent output characteristics with a prompt response against the selective protein

G Dastgeer, ZM Shahzad, H Chae… - Advanced Functional …, 2022 - Wiley Online Library
Bipolar junction transistors (BJTs), the basic building blocks of integrated circuits, are
deployed to control switching applications and logic operations. However, as the thickness …

p‐GeSe/n‐ReS2 Heterojunction Rectifier Exhibiting A Fast Photoresponse with Ultra‐High Frequency‐Switching Applications

G Dastgeer, AM Afzal, G Nazir… - Advanced Materials …, 2021 - Wiley Online Library
The most emerging 2D‐materials‐based heterostructures are considered promising
candidates because of their multifunctional logic applications for electric and optoelectronic …

Large‐area tellurium/germanium heterojunction grown by molecular beam epitaxy for high‐performance self‐powered photodetector

B Zheng, Z Wu, F Guo, R Ding, J Mao… - Advanced Optical …, 2021 - Wiley Online Library
As an attractive elemental semiconductor material, p‐type tellurium (Te) with a narrow
bandgap provides high carrier mobility, strong light–matter interactions in a wide spectral …

Impact of molybdenum dichalcogenides on the active and hole‐transport layers for perovskite solar cells, X‐ray detectors, and photodetectors

D Vikraman, H Liu, S Hussain, SHA Jaffery… - Small, 2022 - Wiley Online Library
The interface architectures of inorganic–organic halide perovskite‐based devices play key
roles in achieving high performances with these devices. Indeed, the perovskite layer is …

Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses

A Ali, H Abbas, M Hussain, SHA Jaffery, S Hussain… - Nano Research, 2022 - Springer
Investigating the promising chalcogenide materials for the development of memory and
advanced neuromorphic computing applications is a critical step in realizing electronic …

Polarity‐Switchable and Self‐Driven Photo‐Response Based on Vertically Stacked Type‐III GeSe/SnS2 Heterojunction

L Wu, W Gao, Y Sun, MM Yang, Z Zheng… - Advanced Materials …, 2022 - Wiley Online Library
Abstract 2D van der Waals (vdWs) heterostructure‐based multifunctional field effect
transistor (FET) has brought about novel physical phenomena. Impressively, anti‐ambipolar …

Gate-tunable rectification and photoresponse in a MoTe 2/SnS 2 van der Waals heterostructure based P–N diode

E Elahi, MA Khan, J Jeon, SK Jerng… - Journal of Materials …, 2023 - pubs.rsc.org
The p–n junction, one of the prominent electrical components capable of being utilized in
electronics and optoelectronics, has attracted renewed interest due to recent research in two …

Strong interlayer transition in a staggered gap GeSe/MoTe2 heterojunction diode for highly efficient visible and near‐infrared photodetection and logic inverter

SHA Jaffery, M Riaz, Z Abbas, G Dastgeer, S Aftab… - …, 2023 - Wiley Online Library
Transition‐metal dichalcogenides exhibit strong light–matter interactions and unique
multifunctional logic behavior. Here, the strong interlayer transition and excellent broadband …