Optoelectronic performance of 2D transition metal dichalcogenides (TMDs)‐based solar
cells and self‐powered photodetectors remain limited due to fabrication challenges, such as …

Up to now, most of the semiconductor photocatalysts can only achieve their high
photocatalytic activity for hydrogen production with the loading of noble metals, such as Pt or …

We show nonlocal spin transport in n-Ge-based lateral spin-valve devices with highly
ordered Co 2 FeSi/n+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle effect …

We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …

We study high-quality Co 2 FeSi 1− x Al x Heusler compound/Si (0≤ x≤ 1) heterointerfaces
for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic …

Ferromagnetic Heusler alloys can be used in combination with semiconductors to create
spintronic devices. The materials have cubic crystal structures, making it possible to grow …

We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si,
grown directly on a Ge (111) substrate. Using molecular beam epitaxy techniques, we can …

Even with renewed interest in Ge as a competitor to Si in field-effect transistors, several key
features of the surface electronic structure of Ge (001) have remained controversial. Notably …

We report on electrical measurements of spin-dependent transport of holes in all-epitaxial
CoFe/p-type germanium (p-Ge)/Fe 3 Si spin valves, where the hole concentration (ph) of the …

We study electrical spin injection and detection in n-Ge across Fe 3 Si/n+-Ge Schottky tunnel
barriers. Spin-accumulation signals detected electrically by the three-terminal Hanle-effect …