This paper reviews recent progress in understanding microstructural and growth-
mechanistic aspects of ultrathin (< 4 nm) oxynitride films for gate dielectric applications …

Atomic transport in thermal growth of thin and ultrathin silicon oxide, nitride, and oxynitride
films on Si is reviewed. These films constitute the gate dielectrics, the “heart” of silicon metal …

The outstanding properties of SiO 2, which include high resistivity, excellent dielectric
strength, a large band gap, a high melting point, and a native, low defect density interface …

Using a first-principles approach, we study the incorporation of nitrogen at the Si (001)-SiO 2
interface by calculating N 1 s core-level shifts for several relaxed interface models. The …

We present a photoemission and x-ray-absorption study on boron carbide which identifies
the spectroscopic features of this material, discussing them in connection with current …

A comprehensive study of different local bonding environments in boron nitride bulk and thin
films has been performed by core-level photoabsorption. Several features not present in …

Angle-resolved x-ray photoelectron spectroscopy (AR–XPS) is utilized in this work to
accurately and nondestructively determine the nitrogen concentration and profile in ultrathin …

Combining spectroscopic methods probing both occupied as well as unoccupied electronic
states, the surface electronic structure of ex situ prepared boron-nitride films is analyzed and …

ZrO 2 films were deposited on Si (100) wafers by the rapid thermal chemical vapor
deposition process using a zirconium (IV) t-butoxide Zr (OC 4 H 9) 4 precursor and oxygen …

Device-grade ultrathin (9–22 Å) films of silicon dioxide, prepared from crystalline silicon by
remote-plasma oxidation, are studied by soft x-ray photoelectron spectroscopy (SXPS). The …