Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
A comprehensive overview of power converter applied in high-power wind turbine: Key challenges and potential solutions
The increasing penetration of offshore wind power generation promotes the revolution of
wind turbine toward high-power application. The development of high-power wind turbine …
wind turbine toward high-power application. The development of high-power wind turbine …
Further Evidence on The Link Between Firm'S Control Mechanisms and Firm Financial Performance: Sultanate of Oman
ER Ahmed, TTY Alabdullah… - … of Governance and …, 2020 - journal.ump.edu.my
Based on the agency theory perspective and its corporate governance problem, the current
study investigated how control mechanisms affect firm financial performance with a special …
study investigated how control mechanisms affect firm financial performance with a special …
A review of switching slew rate control for silicon carbide devices using active gate drivers
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …
Opportunities, challenges, and potential solutions in the application of fast-switching SiC power devices and converters
Power devices based on wide-bandgap material such as silicon carbide (SiC) can operate
at higher switching speeds, higher voltages, and higher temperatures compared to those …
at higher switching speeds, higher voltages, and higher temperatures compared to those …
Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs
The future of power conversion at low-to-medium voltages (around 650 V) poses a very
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …
A novel active gate driver for improving SiC MOSFET switching trajectory
AP Camacho, V Sala, H Ghorbani… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
The trend in power electronic applications is to reach higher power density and higher
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …
Silicon carbide converters and MEMS devices for high-temperature power electronics: A critical review
X Guo, Q Xun, Z Li, S Du - Micromachines, 2019 - mdpi.com
The significant advance of power electronics in today's market is calling for high-
performance power conversion systems and MEMS devices that can operate reliably in …
performance power conversion systems and MEMS devices that can operate reliably in …
High off-state impedance gate driver of SiC MOSFETs for crosstalk voltage elimination considering common-source inductance
The crosstalk voltage on the gate-source terminal of SiC power mosfets in a phase-leg
circuit is composed of the gate-drain capacitor introduced voltage and the common-source …
circuit is composed of the gate-drain capacitor introduced voltage and the common-source …
Parasitic inductance and capacitance-assisted active gate driving technique to minimize switching loss of SiC MOSFET
High di/dt and dv/dt of SiC MOSFET cause a considerable amount of overshoot in device
voltage and current during switching transients in the presence of inverter layout parasitic …
voltage and current during switching transients in the presence of inverter layout parasitic …