Performance and design considerations for gate-all-around stacked-NanoWires FETs
S Barraud, V Lapras, B Previtali… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
This paper presents recent progress on Gate-All-Around (GAA) stacked-NanoWire
(NW)/NanoSheet (NS) MOSFETs. Key technological challenges will be discussed and …
(NW)/NanoSheet (NS) MOSFETs. Key technological challenges will be discussed and …
GAAFET versus pragmatic FinFET at the 5nm Si-based CMOS technology node
YC Huang, MH Chiang, SJ Wang… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
Speed and power performances of Si-based stacked-nanowire gate-all-around (GAA) FETs
and pragmatic ultra-thin-fin FETs at the 5nm CMOS technology node are projected …
and pragmatic ultra-thin-fin FETs at the 5nm CMOS technology node are projected …
Analytical model of CFET parasitic capacitance for advanced technology nodes
B Sun, Z Xu, R Ding, J Yang, K Chen… - … on Electron Devices, 2022 - ieeexplore.ieee.org
The complementary field-effect transistor (CFET) with stacked N-type FET (NFET) and P-type
FET (PFET) is an attractive approach to shrink the footprint of multiple devices at circuit level …
FET (PFET) is an attractive approach to shrink the footprint of multiple devices at circuit level …
Tunability of parasitic channel in gate-all-around stacked nanosheets
S Barraud, B Previtali, V Lapras… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
For the first time, a comprehensive study going from the integration of 3D stacked
nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed …
nanosheets Gate-All-Around (GAA) MOSFET devices to SPICE modeling is proposed …
[图书][B] Nanoelectronics: Materials, Devices, Applications, 2 Volumes
R Puers, L Baldi, M Van de Voorde, SE Van Nooten - 2017 - books.google.com
Offering first-hand insights by top scientists and industry experts at the forefront of R&D into
nanoelectronics, this book neatly links the underlying technological principles with present …
nanoelectronics, this book neatly links the underlying technological principles with present …
Parasitic capacitance modeling of Si-bulk FinFET-based pMOS
FinFET architecture has witnessed great success at commercial 22-nm node and beyond
due to its natural immunity of short-channel effects (SCEs) since the past decade. As the …
due to its natural immunity of short-channel effects (SCEs) since the past decade. As the …
Investigation and analysis of dual-k spacer with different materials and spacer lengths for nanowire-FET performance
In this work, dual-k spacer structures are investigated using a variety of materials along the
high-k spacer length in detail. It is known that not only the higher permittivity materials of …
high-k spacer length in detail. It is known that not only the higher permittivity materials of …
Comparison of dual-k spacer and single-k spacer for single NWFET and 3-stack NWFET
The investigation of the Dual-k spacer through comparative analysis of single nanowire-FET
(NWFET)/3-stack NWFET and underlap/overlap channel is conducted. It is known that the …
(NWFET)/3-stack NWFET and underlap/overlap channel is conducted. It is known that the …
Investigation of parasitic resistance and capacitance effects in nanoscaled FinFETs and their impact on static random-access memory cells
BR Huang, FH Meng, YC King… - Japanese Journal of …, 2017 - iopscience.iop.org
A thorough investigation of the parasitic resistance and capacitance (RC) effects of a single-
fin FinFET on logic CMOS devices and circuits is presented. As parasitic RC effects become …
fin FinFET on logic CMOS devices and circuits is presented. As parasitic RC effects become …
Analytical modeling of parasitic capacitance in inserted-oxide FinFETs
An analytical model of parasitic capacitancein inserted-oxide FinFETs (iFinFETs) is
proposed. A comparative study on the parasitic capacitance of contemporary multigate …
proposed. A comparative study on the parasitic capacitance of contemporary multigate …