This perspective provides an overview of early developments, current status, and remaining
challenges of microLED (lLED) technology, which was first reported in Applied Physics …

The development of electrically pumped semiconductor diode lasers emitting at the
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …

Future applications for emerging AlN semiconductor electronics and optoelectronics are
facilitated by emerging doping technologies enabled by low temperature, non-equilibrium …

AlGaN is the material of choice for high-efficiency deep UV light sources, which is the only
alternative technology to replace mercury lamps for water purification and disinfection. At …

This paper mainly describes the status and prospects of GaN-based tunnel junctions grown
by metal-organic vapor-phase epitaxy. GaN-based tunnel junctions are expected to offer an …

The power efficiencies of state-of-the-art AlxGa1-xN deep-ultraviolet (UV) emitters operating
in the< 300nm wavelength region are currently limited to a few percent in part due to …

Phase separation of indium-bearing III-nitrides is difficult to control and is a major challenge
in the development of these materials. On the other hand, this same process does not occur …

In this work, we report the growth, fabrication, and characterization of aluminum gallium
nitride (AlGaN) nanowire deep ultraviolet light-emitting diodes with a polarization …

We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) with buried GaInN
tunnel junctions (TJs). Under room-temperature continuous-wave operation, the VCSEL with …

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition
were optimized for minimization of the tunnel junction voltage drop. Two device structures …