Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability
Y Cai, P Sun, Y Zhang, C Chen, Z Zhao… - … on Power Electronics, 2024 - ieeexplore.ieee.org
Accurate modeling of switching loss is critical for SiC MOSFETs as well as power converters.
However, previous “static” time-independent models did not consider the impact of gate …
However, previous “static” time-independent models did not consider the impact of gate …
A coupling thermal parameter extraction method of Si/SiC hybrid switch
L Long, F Xiao, C Tu, B Xiao… - CSEE Journal of Power …, 2024 - ieeexplore.ieee.org
The hybrid switch (HyS), composed of Si insulated gate bipolar transistors (IGBTs) and SiC
metal-oxide-semiconductor field-effect transistors (MOSFETs) in parallel, offers comparable …
metal-oxide-semiconductor field-effect transistors (MOSFETs) in parallel, offers comparable …
Threshold Voltage Hysteresis in Compact Models of SiC MOSFETs
Q Sun, A Huerner, P Sochor… - PCIM Europe 2023; …, 2023 - ieeexplore.ieee.org
Recent research has shown that the threshold voltage hysteresis effect in SiC-based power
devices, originating from trapped charges at the gate oxide/SiC interface, has a great impact …
devices, originating from trapped charges at the gate oxide/SiC interface, has a great impact …
Application of Computational Modeling in Electronics Devices
SC Nwaneri, ID Adewale, HC Ugo - Computational Modeling and … - taylorfrancis.com
Computational modeling has remained pivotal to the understanding of the behaviour of
various scientific and engineering systems. This improved understanding is necessary for …
various scientific and engineering systems. This improved understanding is necessary for …