Nanoscale self-affine surface smoothing by ion bombardment
DK Goswami, BN Dev - Physical Review B, 2003 - APS
The topography of silicon surfaces irradiated by a 2-MeV Si+ ion beam at normal incidence
and ion fluences in the range 10 15–10 16 ions/cm 2 has been investigated using scanning …
and ion fluences in the range 10 15–10 16 ions/cm 2 has been investigated using scanning …
Low current MeV Au2+ ion-induced amorphization in silicon: Rutherford backscattering spectrometry and transmission electron microscopy study
J Kamila, B Satpati, DK Goswami, M Rundhe… - Nuclear Instruments and …, 2003 - Elsevier
The amorphization due to MeV Au2+ ion implantation in Si (111) has been studied using
Rutherford backscattering spectrometry/channeling (RBS/C) and transmission electron …
Rutherford backscattering spectrometry/channeling (RBS/C) and transmission electron …
Observation of smoothing and self-affine fractal roughness on MeV ion-irradiated Si surfaces
DK Goswami, BN Dev - Nuclear Instruments and Methods in Physics …, 2003 - Elsevier
Scanning tunneling microscopy (STM) was used to quantitatively investigate the fractal
nature of MeV ion irradiated silicon surfaces. Si (100) surfaces (with native oxide) were …
nature of MeV ion irradiated silicon surfaces. Si (100) surfaces (with native oxide) were …
Range profiles and lattice location of MeV implant of Sb in Si (1 0 0)
The range parameters and lattice site occupation of Sb ions implanted at MeV energy in a Si
(100) single crystal have been determined using Rutherford backscattering spectrometry …
(100) single crystal have been determined using Rutherford backscattering spectrometry …
Three-dimensional implantation profiles: The ratio of lateral to longitudinal straggling
D Fink, M Müller, R Klett, BR Shi, N Cue… - Nuclear Instruments and …, 1998 - Elsevier
The presently available database on lateral and longitudinal range stragglings of energetic
particles implanted into amorphous solids has been compared with theoretical predictions …
particles implanted into amorphous solids has been compared with theoretical predictions …
Materials modifications in heavy ion interactions with single crystals and their ion beam characterization
BN Dev - Nuclear Instruments and Methods in Physics Research …, 1999 - Elsevier
Materials modifications in several hundred keV to a few MeV heavy ion interactions with
single crystalline solids have been discussed. For the analysis of the modified layers mainly …
single crystalline solids have been discussed. For the analysis of the modified layers mainly …
Projected range and range straggling of MeV Au ions in Si
G Kuri - Nuclear Instruments and Methods in Physics Research …, 1996 - Elsevier
Substrates of Si were implanted with 2.5–9.0 MeV Aun+ (n= 2–5) ions at room temperature
and tilted geometry. The reduced energies cover the range from 2 to 7.5. The projected …
and tilted geometry. The reduced energies cover the range from 2 to 7.5. The projected …
Radiation effects on the electrical activation processes in InSb under influence of nuclear reactor neutrons
NG Kolin, DI Merkurisov, SP Solov'ev - Physica B: Condensed Matter, 2001 - Elsevier
Electrical activation processes in InSb samples irradiated with neutrons of a nuclear reactor
have been studied. Neutron transmutation doping of InSb was shown to be possible with tin …
have been studied. Neutron transmutation doping of InSb was shown to be possible with tin …
Rutherford backscattering and electron microscopy study of annealing behavior of MeV implanted gold in silicon
S Mohapatra, DP Mahapatra - Nuclear Instruments and Methods in Physics …, 2004 - Elsevier
Rutherford backscattering spectrometry (RBS) and cross-sectional transmission electron
microscopy (XTEM) have been used to study the annealing behavior of MeV Au implanted in …
microscopy (XTEM) have been used to study the annealing behavior of MeV Au implanted in …