In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …

The role of extended and point defects, and key impurities such as C, O, and H, on the
electrical and optical properties of GaN is reviewed. Recent progress in the development of …

GaN and related materials (especially AlGaN) have recently attracted a lot of interest for
applications in high power electronics capable of operation at elevated temperatures …

GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …

Successful ex situ and in situ cleaning procedures for AlN and GaN surfaces have been
investigated and achieved. Exposure to HF and HCl solutions produced the lowest …

In this paper, we review the metal–GaN contact technology to shed light on some of the
critical issues such as GaN surface cleaning for metallization, Schottky barrier formation to …

Group III nitride semiconductors have attracted great attention in recent years owing to the
successful commercialization of light emitting diodes from ultraviolet to visible range1–5 and …

Low-resistance ohmic contacts with high transparency to p-type GaN have been developed
by oxidizing Ni/Au thin films. Compared to the metallic Ni/Au contacts, the oxidized Ni/Au …

We report on the material, electrical, and optical properties of metal–semiconductor–metal
ultraviolet photodetectors fabricated on single-crystal GaN, with active layers of 1.5 and 4.0 …

GaN-based semiconductors are of great technological importance for the fabrication of
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …