Area and energy efficient joint 2T SOT-MRAM-based on diffusion region sharing with adjacent cells
Y Jang, J Park - IEEE Transactions on Circuits and Systems II …, 2021 - ieeexplore.ieee.org
In this brief, we present a novel low area joint 2T spin orbit torque magnetic random access
memory (SOT-MRAM) cell architecture. The proposed joint 2T cell achieves up to 15% of …
memory (SOT-MRAM) cell architecture. The proposed joint 2T cell achieves up to 15% of …
A detailed study of sot-mram as an alternative to dram primary memory in multi-core environment
As the current primary memory technology is reaching its limits, it is essential to explore
alternative memory technologies to accommodate modern applications and use cases …
alternative memory technologies to accommodate modern applications and use cases …
Ultra High-Density SOT-MRAM Design for Last-Level On-Chip Cache Application
Y Seo, KW Kwon - Electronics, 2023 - mdpi.com
This paper presents ultra high-density spin-orbit torque magnetic random-access memory
(SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many …
(SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many …
Area and energy efficient SOT-MRAM bit cell based on 3 transistors with shared diffusion regions
In this brief, we present a novel bit cell structure of spin-orbit-torque magnetic random
access memory (SOT-MRAM) for the reduction of both cell size and write energy …
access memory (SOT-MRAM) for the reduction of both cell size and write energy …
High-density 1R/1W dual-port spin-transfer torque MRAM
Y Seo, KW Kwon - Micromachines, 2022 - mdpi.com
Spin-transfer torque magnetic random-access memory (STT-MRAM) has several desirable
features, such as non-volatility, high integration density, and near-zero leakage power …
features, such as non-volatility, high integration density, and near-zero leakage power …
[HTML][HTML] Complementary Polarizer SOT-MRAM for Low-Power and Robust On-Chip Memory Applications
H Kim, KW Kwon, Y Seo - Electronics, 2024 - mdpi.com
Complementary polarized spin-transfer torque magnetic random-access memory (CPSTT-
MRAM) has been proposed to address the sensing reliability issues caused by the single …
MRAM) has been proposed to address the sensing reliability issues caused by the single …
Layout aware optimization methodology for SOT-MRAM based on technically feasible top-pinned magnetic tunnel junction process
C Wang, Z Wang, Z Zhang, J Feng… - … on Computer-Aided …, 2022 - ieeexplore.ieee.org
The emerging spin-orbit torque magnetic random-access memory (SOT-MRAM) shows
promising prospects in high-level cache applications due to its subnanosecond switching …
promising prospects in high-level cache applications due to its subnanosecond switching …
[HTML][HTML] Advanced hybrid MRAM based novel GPU cache system for graphic processing with high efficiency
S Han, Y Jiang - AIP Advances, 2024 - pubs.aip.org
With the rapid development of portable computing devices and users' demand for high-
quality graphics rendering, embedded Graphics Processing Units (GPU) systems for …
quality graphics rendering, embedded Graphics Processing Units (GPU) systems for …
SOT-MRAM Based Main Memory: An Alternative to DRAM
Data is generated enormously today and to process this we need large memories with high
speed and optimized power consumption. Conventional DRAM based system which were …
speed and optimized power consumption. Conventional DRAM based system which were …
SPICE 기반모델링을이용한STT 와SHE 소자의스위칭현상비교및분석
김혜림， 서영교 - Proceedings of KIIT Conference, 2023 - dbpia.co.kr
Ahmed et al. 의 논문에서 제안된 SHE MTJ SPICE 모델을 이용해 STT MTJ 와 SHE MTJ 의
스위칭이 시작되는 전류 측정과 스위칭 전류의 비교를 진행하였다. 시뮬레이션을 통해 SHE …
스위칭이 시작되는 전류 측정과 스위칭 전류의 비교를 진행하였다. 시뮬레이션을 통해 SHE …