Defects create key functionalities in semiconductor devices by contributing with charge
carriers or assisting optical transitions. On the other hand, defects may cause severe …

The experimental data on orientation relationships for halide vapor phase epitaxy (HVPE) κ-
Ga 2 O 3 film grown on (0001) α-Al 2 O 3 substrate and the theoretical model that describes …

In the epitaxy of semiconducting materials, substrate miscut is introduced to improve the
morphology of deposited layers. However, in the mismatched epitaxial system, the substrate …

In this study, α-Ga 2 O 3 films of thickness about 1 μm were epitaxially deposited on m-plane
sapphire substrate by halide vapor phase epitaxy. The lattice mismatch between α-Ga 2 O 3 …

Planar defects in α-Ga2O3 thin films produced by HVPE | Journal of Applied Physics | AIP
Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt Text Close Publishers AIP …

Strain relaxation of thick InGaN layers was studied in order to develop technology of InGaN
templates for deposition of InGaN Quantum Wells (QWs) and InGaN layers of high-In …

The problem of early and reliable prediction of earthquakes, which can lead to catastrophic
consequences, is far from being solved, so it remains extremely topical. The next step …

We analyze the preference of various types of misfit dislocation (MD) formation in
film/substrate κ-Ga2O3/α-Al2O3 and κ-(AlxGa1–x) 2O3/κ-Al2O3 heterostructures. We …

Bulk nanostructured, or ultrafine-grained metals and alloys structured by severe plastic
deformation (SPD) methods usually demonstrate high strength and reduced ductility. The …

We analyze the possibility for reducing the density of threading dislocations (TDs) in a
porous AlN films exploring numerical calculations of thermoelastic stresses and the reaction …