Diamond power devices: state of the art, modelling, figures of merit and future perspective
With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …
Experimental evaluation of switching characteristics, switching losses and snubber design for a full SiC half-bridge power module
This paper analyzes the switching performance of the full SiC half-bridge power module
BSM120D12P2C005 from Rohm Semiconductor. It investigates if the combination of a DC …
BSM120D12P2C005 from Rohm Semiconductor. It investigates if the combination of a DC …
Fractional order PID controlled quasi Z-source inverter with front-line semiconductor material made of power electronics switches fed PMSM motor for EV applications
In the area of control theory, conventional PID controller is most commonly used for various
applications to bring out the output of the system at higher efficacy. Now due various …
applications to bring out the output of the system at higher efficacy. Now due various …
Advanced semiconductor materials in power electronic switches for energy-efficient converters in an electric vehicle charging system with closed-loop FOPID control
The growth in consumer use of electric vehicles is influencing the electrification of
transportation in greener and more energy-efficient ways. The availability of high-speed …
transportation in greener and more energy-efficient ways. The availability of high-speed …
Design considerations and laboratory testing of power circuits for parallel operation of silicon carbide MOSFETs
In this paper, the impact of using parallel SiC MOSFETs as the switching device is
investigated. Measurement considerations for a double pulse test are discussed, and the …
investigated. Measurement considerations for a double pulse test are discussed, and the …
SiC based technology for high power electronics and packaging applications
A Sharma, SJ Lee, YJ Jang, JP Jung - Journal of the …, 2014 - koreascience.kr
Silicon has been most widely used semiconductor material for power electronic systems.
However, Si-based power devices have attained their working limits and there are a lot of …
However, Si-based power devices have attained their working limits and there are a lot of …
DCB-based low-inductive SiC modules for high frequency operation
The work at hand encompasses the design, manufacture and electrical characterisation of
full-SiC modules optimised for high frequency operation. The parasitic inductances of the …
full-SiC modules optimised for high frequency operation. The parasitic inductances of the …
Evaluation of Switching Characteristics, Switching Losses and Snubber Design for a Full SiC Half-Bridge Power Module
BN Torsæter - 2016 - ntnuopen.ntnu.no
In this thesis, the performance of the full Silicon Carbide (SiC) half-bridge power module
BSM120D12P2C005 from Rohm Semiconductor is investigated. A laboratory circuit …
BSM120D12P2C005 from Rohm Semiconductor is investigated. A laboratory circuit …
Quantitative analysis of efficiency improvement of a propulsion drive by using sic devices: A case of study
One of the emerging research topics in the propulsion drive of the electric vehicles is the
improvement in the efficiency of its component parts, namely, the propulsion motor and the …
improvement in the efficiency of its component parts, namely, the propulsion motor and the …
Surface passivation of Ti/4H-SiC Schottky barrier diode
Surface properties of SiC power devices mostly depend on the passivation layer (PL). This
layer has direct influence on electrical characteristics of devices. 2D numerical simulation of …
layer has direct influence on electrical characteristics of devices. 2D numerical simulation of …