Controlling room temperature ferromagnetism and band gap in ZnO nanostructured thin films by varying angle of implantation
RV Hariwal, HK Malik, A Negi, A Kandasami - RSC advances, 2018 - pubs.rsc.org
The defects in the host lattice play a major role in tuning the surface roughness, optical band
gap and the room temperature ferromagnetism (RTFM) of ZnO thin films. Herein, we report a …
gap and the room temperature ferromagnetism (RTFM) of ZnO thin films. Herein, we report a …
Effect of silver thickness on structural, optical and morphological properties of nanocrystalline Ag/NiO thin films
S Jalili, F Hajakbari, A Hojabri - Journal of Theoretical and Applied …, 2018 - Springer
Silver (Ag) nanolayers were deposited on nickel oxide (NiO) thin films by DC magnetron
sputtering. The thickness of Ag layers was in range of 20–80 nm by variation of deposition …
sputtering. The thickness of Ag layers was in range of 20–80 nm by variation of deposition …
Influence of negative bias voltage on structural and mechanical properties of nanocrystalline TiNx thin films treated in hot cathode arc discharge plasma system
Ti thin films were grown by DC sputtering on a glass substrate and then nitrided in a hot
cathode arc discharge plasma system, which is an effective approach to independently …
cathode arc discharge plasma system, which is an effective approach to independently …
Effect of plasma oxidation parameters on physical properties of nanocrystalline nickel oxide thin films grown by two-step method: DC sputtering and plasma oxidation
F Hajakbari, S Rashvand, A Hojabri - Journal of Theoretical and Applied …, 2019 - Springer
Nanocrystalline nickel oxide (NiO) thin films were successfully grown on quartz substrates
by two-step method. In the first step, nickel films were deposited on quartz substrates by DC …
by two-step method. In the first step, nickel films were deposited on quartz substrates by DC …
Structural, morphological and optical properties of nanostructure nickel oxide thin films on quartz substrates grown by plasma oxidation
S Rashvand, A Hojabri - … of Inorganic and Organometallic Polymers and …, 2017 - Springer
In this work nanocrystalline nickel oxide (NiO) thin films were successfully prepared by
oxygen plasma treatment of nickel films deposited on quartz substrates by direct current …
oxygen plasma treatment of nickel films deposited on quartz substrates by direct current …
Tuning of mechanical and structural properties of 20 MC 5 steel using N ion implantation and subsequent annealing
In the present work, effect of 50 keV nitrogen ion implantation on the structure and
mechanical properties of as-implanted and annealed 20 MC 5 steel samples is investigated …
mechanical properties of as-implanted and annealed 20 MC 5 steel samples is investigated …
Investigations on mechanical and electrical properties of N+ ions implanted TiN thin films
In the present work, we have grown titanium (Ti) thin films using DC sputtering system in
argon atmosphere. Ti films are implanted using low energy ion beam (having 70 keV …
argon atmosphere. Ti films are implanted using low energy ion beam (having 70 keV …
Effect of substrate temperatures on structural and morphological properties of nano-crystalline silver thin films grown on silicon substrates
A Hojabri, Z Kavyani, M Ghoranneviss - Journal of Inorganic and …, 2017 - Springer
The silver (Ag) thin films were deposited on silicon substrates by DC magnetron sputtering
method under different substrate temperatures of 100–500° C. Then the as-deposited films …
method under different substrate temperatures of 100–500° C. Then the as-deposited films …
Fluence dependant formation of β-SiC by ion implantation and thermal annealing
PR Poudel, B Rout, DR Diercks, YM Strzhemechny… - Applied Physics A, 2011 - Springer
The β-SiC nanocrystals were synthesized by the implantation of carbon ions (C−) into silicon
followed by high-temperature annealing. The carbon fluences of 1× 10 17, 2× 10 17, 5× 10 …
followed by high-temperature annealing. The carbon fluences of 1× 10 17, 2× 10 17, 5× 10 …
Crystallization of β-SiC in thin SiC x layers (x = 0.03−1.40) synthesized by multiple implantation of carbon ions into silicon
NB Beisenkhanov - Technical Physics, 2011 - Springer
The composition and structure of homogeneous SiC 1.4, SiC 0.95, SiC 0.7, SiC 0.4, SiC
0.12, and SiC 0.03 layers obtained by multiple high-dose implantation of carbon ions with …
0.12, and SiC 0.03 layers obtained by multiple high-dose implantation of carbon ions with …