Gate all around nanowire TFET with high ON/OFF current ratio

A Ravindran, A George, CS Praveen… - Materials Today …, 2017 - Elsevier
The serious thermal management crises in the next generation digital systems due to power
dissipation boom are limited by the reduction in supply voltage. Transistors with lower …

Temperature characteristics of Gate all around nanowire channel Si-TFET

FNA Agha, Y Hashim… - Journal of Physics …, 2021 - iopscience.iop.org
This paper study the impact of working temperature on the electrical characteristics of gate
all around nanowire channel Si-TFET and examines the effect of working temperature on …

Analysis and Simulation of Emerging FET Devices: FinFET, TFET

D Vergallo - 2018 - webthesis.biblio.polito.it
Thesis based on the Analysis and Simulation of Emerging FET Devices. Implementation in
Matlab of analytical models for the characterization of scaling behaviour of FinFET different …

[PDF][PDF] Evaluation of TFETs performances for low power applications

A Caminiti - 2019 - webthesis.biblio.polito.it
The main goal of the thesis was to evaluate the performances of the Tunnel FETs inside
logic circuit for low power applications, highlighting the power consumption and the working …

[PDF][PDF] GATE ENGINEERING OF DOUBLE GATE In0. 53Ga0. 47As TUNNEL FET

CS Praveen, A Ravindran, SK John, S Abe - academia.edu
Increased power-dissipation in upcoming generation digital systems are limited by supply
voltage reductions. For such systems, transistors with lower Subthreshold Slopes are …