Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …

The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …

The elastic constants of GaN have been determined using Brillouin scattering; in GPa they
are: C11 390, C33 398, C44 105, C66 123, C12 145, and C13 106. Our values differ …

The thermal conductivity of n-and p-type doped gallium nitride (GaN) epilayers having
thicknesses of 3–4 μm was investigated using time domain thermoreflectance. Despite …

The thermal expansion of hexagonal GaN bulk crystals was studied in an extended
temperature range from 12 to 1025 K. The lattice parameters a and c were measured by …

Controlled introduction of impurities forms the basis of much of semiconductor technology;
indeed p-type (acceptor-doped) and n-type (donor-doped) layers and the junctions between …

Powder diffraction data for fine AlN and GaN powders were collected at a Bragg–Brentano
diffractometer equipped with a Johansson monochromator and a semiconductor strip …

Optical absorption studies were performed to investigate the dependence of the
fundamental band gap of Al x Ga 1− x N epitaxial films on Al content and applied hydrostatic …

Gallium nitride (GaN) is a wide-bandgap semiconductor that is useful for optoelectronics and
high speed and high power electronics. Fabrication of GaN devices requires etching for …