Catalyst synthesis with precise control over the structure of catalytic active sites at the atomic
level is of essential importance for the scientific understanding of reaction mechanisms and …

Atomic layer deposition (ALD) is a thin film deposition technique which operates via
repeated alternating and self-terminating surface-based reactions between a precursor and …

Atomic layer deposition (ALD) is an attractive method to deposit thin films for advanced
technological applications such as microelectronics and nanotechnology. One material …

Thermal atomic layer deposition (ALD) of noble metals is frequently performed using
molecular oxygen as the nonmetal precursor to effect combustion-type chemistry at relatively …

Ru films were grown by atomic layer deposition in the temperature range of using
(ethylcyclopentadienyl)(pyrrolyl) ruthenium and air or oxygen as precursors on HF-etched …

The metalorganic precursor cyclopentadienylethyl (dicarbonyl) ruthenium (CpRu (CO) 2 Et)
was used to develop an atomic layer deposition (ALD) process for ruthenium. O 2 gas and O …

Ru thin films were grown on hydrogen terminated Si, SiO2, Al2O3, HfO2, and TiO2 surfaces
by atomic layer deposition from bis (2, 5-dimethylpyrrolyl) ruthenium precursor and oxygen …

The thermal chemistry of tris (2, 2, 6, 6-tetramethyl-3, 5-heptanedionato) ruthenium (III)(Ru
(tmhd) 3), a potential precursor for the chemical deposition of ruthenium-containing films, on …

A detailed study of the atomic layer deposition of Al2O3 on Ru film surfaces by means of in
situ photoelectron spectroscopy has been carried out. We discuss how the atomic layer …

The surface reactions during the atomic layer deposition (ALD) of Ru using an
organometallic precursor [CpRu (CO) 2Et] and O2 gas were studied using quadrupole mass …