As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …

To date, it has remained challenging to achieve N-polar AlN, which is of great importance for
high power, high frequency, and high temperature electronics, acoustic resonators and …

A systematic investigation on PA-MBE grown GaN with low growth rates (less than 0.2 µm/h)
has been conducted in a wide growth temperature range, in order to guide future growth of …

Advances in molecular beam epitaxy (MBE) have been crucial for the engineering of
heterostructures in which the wave nature of electrons dictates carrier transport dynamics …

The spectral sensitivity change of a silicon photodiode with its temperature is analyzed in the
article. This research area is relevant because silicon photodiodes are used as sensitive …

To obtain high-quality heterostructures with reproducible parameters, it is important to have
a system of precise temperature control on the wafer surface directly in the deposition area …

Анотація В статті проведено аналіз зміни спектральної чутливості кремнієвого
фотодіода зі зміною його температури. Дана область досліджень є актуальною …