In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

Memristors are memory resistors that promise the efficient implementation of synaptic
weights in artificial neural networks. Whereas demonstrations of the synaptic operation of …

In this paper, we review the recent progress in the resistive random access memory
(ReRAM) technology, one of the most promising emerging nonvolatile memories, in which …

Building programmable resistive devices in contact holes at the crossover of a plurality of
conductor lines in more than two vertical layers is disclosed. There are plurality of first …

This paper addresses the numerical modeling of reset programming in NiO-based resistive-
switching memory. In our model, we simulate electrical conduction and heating in the …

The physical understanding of the programming and reliability mechanisms in resistive-
switching memory devices requires a detailed characterization of the electrical and thermal …

Back-end-of-line integrated 1*1\mum^2\hboxTiN/HfO_2/\breakTi/TiN MIM memory devices in
a 0.25-μm complementary metal–oxide–semiconductor technology were built to investigate …

Programmable metallization cell (PMC) memory, also known as conductive bridging RAM
(CBRAM), is a resistive-switching memory based on non-volatile formation and dissolution …