Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …
been extensively investigated as potential replacements for current polar c-plane LEDs …
Review of recent progress on vertical GaN-based PN diodes
T Pu, U Younis, HC Chiu, K Xu, HC Kuo… - Nanoscale Research …, 2021 - Springer
As a representative wide bandgap semiconductor material, gallium nitride (GaN) has
attracted increasing attention because of its superior material properties (eg, high electron …
attracted increasing attention because of its superior material properties (eg, high electron …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Vertical GaN power devices: Device principles and fabrication technologies—Part I
Recent years have witnessed a tremendous development of vertical gallium nitride (GaN)
power devices, a new class of device technology that could be the key enabler for next …
power devices, a new class of device technology that could be the key enabler for next …
[HTML][HTML] High voltage, high current GaN-on-GaN pn diodes with partially compensated edge termination
An approach to realizing high-voltage, high-current vertical GaN-on-GaN power diodes is
reported. We show that by combining a partially compensated ion-implanted edge …
reported. We show that by combining a partially compensated ion-implanted edge …
Vertical GaN power devices: Device principles and fabrication technologies—Part II
Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …
devices and systems with higher energy efficiency, higher power density, faster switching …
A Comparative Study on the Electrical Properties of Vertical ( ) and (010) -Ga2O3 Schottky Barrier Diodes on EFG Single-Crystal Substrates
This paper reports a comprehensive study on the anisotropic electrical properties of vertical
(2̅01) and (010) β-Ga 2 O 3 Schottky barrier diodes (SBDs). The devices were fabricated …
(2̅01) and (010) β-Ga 2 O 3 Schottky barrier diodes (SBDs). The devices were fabricated …
High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings
This letter demonstrates novel hydrogen-plasma based guard rings (GRs) for high voltage
vertical GaN pn diodes grown on bulk GaN substrates by metalorganic chemical vapor …
vertical GaN pn diodes grown on bulk GaN substrates by metalorganic chemical vapor …
[HTML][HTML] Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers
This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical
Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design …
Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design …
Demonstration of 1.27 kV Etch-Then-Regrow GaN - Junctions With Low Leakage for GaN Power Electronics
This letter reports high performance GaN pn junctions with regrown p-GaN by metalorganic
chemical vapor deposition (MOCVD) on dry-etched surfaces. The breakdown voltage …
chemical vapor deposition (MOCVD) on dry-etched surfaces. The breakdown voltage …