GaN-on-Si power technology: Devices and applications
In this paper, we present a comprehensive review and discussion of the state-of-the-art
device technology and application development of GaN-on-Si power electronics. Several …
device technology and application development of GaN-on-Si power electronics. Several …
Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
N Islam, MFP Mohamed, MFAJ Khan, S Falina… - Crystals, 2022 - mdpi.com
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
Well‐defined nanostructures for electrochemical energy conversion and storage
Electrochemical energy conversion and storage play crucial roles in meeting the increasing
demand for renewable, portable, and affordable power supplies for society. The rapid …
demand for renewable, portable, and affordable power supplies for society. The rapid …
Forward bias gate breakdown mechanism in enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors
In this letter, we studied the forward bias gate breakdown mechanism on enhancement-
mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our …
mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best of our …
Integration of LPCVD-SiNx gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime
By employing an interface protection technique to overcome the degradation of etched GaN
surface in high-temperature process, highly reliable LPCVD-SiN x gate dielectric was …
surface in high-temperature process, highly reliable LPCVD-SiN x gate dielectric was …
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer
Z Zhang, G Yu, X Zhang, X Deng, S Li… - … on Electron Devices, 2016 - ieeexplore.ieee.org
This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron
mobility transistors (MIS-HEMTs). The gate dielectric layer and the surface passivation layer …
mobility transistors (MIS-HEMTs). The gate dielectric layer and the surface passivation layer …
Recent developments and prospects of fully recessed MIS gate structures for GaN on Si power transistors
P Fernandes Paes Pinto Rocha, L Vauche… - Energies, 2023 - mdpi.com
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …
Performance and VTH Stability in E-Mode GaN Fully Recessed MIS-FETs and Partially Recessed MIS-HEMTs With LPCVD-SiNx/PECVD-SiNx Gate Dielectric …
In this paper, we carried out a systematic comparison between the enhancement-mode GaN-
based fully recessed metal-insulator-semiconductor field-effect transistors (MIS-FETs) and …
based fully recessed metal-insulator-semiconductor field-effect transistors (MIS-FETs) and …