A 3.1–10.6 GHz ultra-wideband CMOS low noise amplifier with current-reused technique

YJ Lin, SSH Hsu, JD Jin… - IEEE Microwave and …, 2007 - ieeexplore.ieee.org
A 3.1-10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a current-reused
technique and a simple high-pass input matching network is proposed. The implemented …

A K-/Ka-Band Broadband Low-Noise Amplifier Based on the Multiple Resonant Frequency Technique

C Zhao, D Duan, Y Xiong, H Liu, Y Yu… - … on Circuits and …, 2022 - ieeexplore.ieee.org
A wideband CMOS low-noise amplifier (LNA) with multiple resonant frequencies is
demonstrated in this article. A common source (CS) with inductive degeneration topology is …

A 2.4-GHz Resistive Feedback LNA in 0.13-m CMOS

S Joo, TY Choi, B Jung - IEEE journal of solid-state circuits, 2009 - ieeexplore.ieee.org
A g m-boosted resistive feedback low-noise amplifier (LNA) using a series inductor matching
network and its application to a 2.4 GHz LNA is presented. While keeping the advantage of …

The impact of semiconductor technology scaling on CMOS RF and digital circuits for wireless application

K Lee, I Nam, I Kwon, J Gil, K Han… - IEEE Transactions on …, 2005 - ieeexplore.ieee.org
The impact of CMOS technology scaling on the various radio frequency (RF) circuit
components such as active, passive and digital circuits is presented. Firstly, the impact of …

A 40-Gb/s Transimpedance Amplifier in 0.18-m CMOS Technology

JD Jin, SSH Hsu - IEEE Journal of Solid-State Circuits, 2008 - ieeexplore.ieee.org
A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From the
measured S-parameters, a transimpedance gain of 51 dBΩ and a 3-dB bandwidth up to 30.5 …

A 5 GHz 0.95 dB NF highly linear cascode floating-body LNA in 180 nm SOI CMOS technology

A Madan, MJ McPartlin, C Masse… - IEEE Microwave and …, 2012 - ieeexplore.ieee.org
A 5 GHz CMOS LNA featuring a record 0.95 dB noise-figure is reported. Using an inductively-
degenerated cascode topology combined with floating-body transistors and high-Q passives …

A 2.4-GHz Low-Power Low-IF Receiver and Direct-Conversion Transmitter in 0.18- CMOS for IEEE 802.15.4 WPAN Applications

I Nam, K Choi, J Lee, HK Cha, BI Seo… - IEEE Transactions …, 2007 - ieeexplore.ieee.org
In this paper, a low-power low-IF receiver and a direct-conversion transmitter (DCT) suitable
for the IEEE standard 802.15. 4 radio system at the 2.4-GHz band are presented in 0.18 …

Ultra-low-power cascaded CMOS LNA with positive feedback and bias optimization

MT Lai, HW Tsao - IEEE Transactions on Microwave Theory …, 2013 - ieeexplore.ieee.org
<? Pub Dtl=""?> A novel circuit topology for a CMOS low-noise amplifier (LNA) is presented
in this paper. By employing a positive feedback technique at the common-source transistor …

Accurate systematic model-parameter extraction for on-chip spiral inductors

HH Chen, HW Zhang, SJ Chung… - IEEE Transactions on …, 2008 - ieeexplore.ieee.org
A systematic model-parameter-extraction technique is presented for accurately modeling on-
chip spiral inductors in radio frequency integrated circuits (RFICs). The model is a pi-circuit …

Enhancing active reconfigurable intelligent surface

MI Khalil - Intelligent and Converged Networks, 2022 - ieeexplore.ieee.org
A Reconfigurable Intelligent Surface (RIS) panel comprises many independent Reflective
Elements (REs). One possible way to implement an RIS is to use a binary passive load …