Si/SiGe heterostructures: from material and physics to devices and circuits
DJ Paul - Semiconductor science and technology, 2004 - iopscience.iop.org
Silicon germanium (SiGe) has moved from being a research material to accounting for a
small but significant percentage of manufactured semiconductor devices. This percentage is …
small but significant percentage of manufactured semiconductor devices. This percentage is …
[HTML][HTML] A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction
With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an
opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic …
opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic …
[HTML][HTML] Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel
electronic and optical properties not found in the constituent layers. Here, we present the …
electronic and optical properties not found in the constituent layers. Here, we present the …
Controllable preparation of 2D vertical van der Waals heterostructures and superlattices for functional applications
Abstract 2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic
physical properties and applications for new devices have attracted immense interest …
physical properties and applications for new devices have attracted immense interest …
Tunable negative differential resistance in van der Waals heterostructures at room temperature by tailoring the interface
Vertically stacked two-dimensional van der Waals (vdW) heterostructures, used to obtain
homogeneity and band steepness at interfaces, exhibit promising performance for band-to …
homogeneity and band steepness at interfaces, exhibit promising performance for band-to …
Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR
N Jin, SY Chung, RM Heyns, PR Berger… - IEEE electron device …, 2004 - ieeexplore.ieee.org
A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is
realized with low-temperature molecular beam epitaxy by stacking two RITDs with a …
realized with low-temperature molecular beam epitaxy by stacking two RITDs with a …
Parameter control for enhanced peak-to-valley current ratio in a MoS 2/MoTe 2 van der Waals heterostructure
The Ids–Vds properties of a van der Waals cross-junction of few layered MoS2/MoTe2 were
investigated, and the physical device parameters were altered in order to transform the …
investigated, and the physical device parameters were altered in order to transform the …
Voltage-controlled multiple-valued logic design using negative differential resistance devices
KJ Gan, CS Tsai, YW Chen, WK Yeh - Solid-state electronics, 2010 - Elsevier
This paper demonstrates a concise and novel voltage-controlled multiple-valued logic (MVL)
design using the standard BiCMOS technique. This MVL circuit is constructed by a voltage …
design using the standard BiCMOS technique. This MVL circuit is constructed by a voltage …
peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications
N Jin, SY Chung, AT Rice, PR Berger, R Yu… - Applied physics …, 2003 - pubs.aip.org
Room-temperature I–V characteristics of epitaxially grown Si/SiGe resonant interband
tunneling diodes (RITDs) with extremely high peak current densities are presented. By …
tunneling diodes (RITDs) with extremely high peak current densities are presented. By …
High 5.2 peak-to-valley current ratio in Si/SiGe resonant interband tunnel diodes grown by chemical vapor deposition
Si/SiGe resonant interband tunnel diodes were fabricated using chemical vapor deposition
(CVD) on 200-mm diameter p-doped silicon wafers. The resonant interband tunnel diode …
(CVD) on 200-mm diameter p-doped silicon wafers. The resonant interband tunnel diode …