A review on carrier mobilities of epitaxial graphene on silicon carbide
W Norimatsu - Materials, 2023 - mdpi.com
Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that
produces wafer-scale, single-orientation graphene on an insulating substrate. It is often …
produces wafer-scale, single-orientation graphene on an insulating substrate. It is often …
State‐of‐the‐Art Graphene Synthesis Methods and Environmental Concerns
Graphene, a 2D sp2 hybridized carbon sheet consisting of a honeycomb network, is the
building block of graphite. Since its discovery in 2004, graphene's exceptional electronic …
building block of graphite. Since its discovery in 2004, graphene's exceptional electronic …
Epitaxial graphene on silicon carbide as a tailorable metal–semiconductor interface
To access semiconductor functionality, the metallic contact is a key issue. Silicon carbide
(SiC) is unique because it inherently provides a monolithic metallic contact with …
(SiC) is unique because it inherently provides a monolithic metallic contact with …
[PDF][PDF] Review rticle State-of-the-Art Graphene Synthesis Methods and Environmental Concerns
Graphene, a 2D sp2 hybridized carbon sheet consisting of a honeycomb network, is the
building block of graphite. Since its discovery in 2004, graphene's exceptional electronic …
building block of graphite. Since its discovery in 2004, graphene's exceptional electronic …