Porous silicon membranes and their applications: Recent advances
Porous silicon (PSi) research has been active for several decades. The multiple properties
and structural features of PSi have made it a promising material for a wide variety of …
and structural features of PSi have made it a promising material for a wide variety of …
SOI technologies for RF and millimeter-wave applications
This chapter presents an overview of silicon-on-insulator (SOI) technology for radio-
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
frequency (RF) and millimeter-wave telecommunication applications. The SOI technology …
Ion Drift and Polarization in Thin SiO2 and HfO2 Layers Inserted in Silicon on Sapphire
VP Popov, VA Antonov, AV Miakonkikh, KV Rudenko - Nanomaterials, 2022 - mdpi.com
To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border
obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a …
obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a …
More silicon-deep in the nanovalley
N Koshida - Materials Science in Semiconductor Processing, 2023 - Elsevier
Some topics on the studies of nanostructured Si are presented. The emphasis is laid on the
unique features of nano-Si systems in relation to Si quantum dots (Si-QDs), nano-textures …
unique features of nano-Si systems in relation to Si quantum dots (Si-QDs), nano-textures …
High-resistance thermally stable silicon layers produced by the CO+ ion implantation
I Tyschenko, F Tikhonenko, A Gutakovskii, V Vdovin… - Materials Letters, 2022 - Elsevier
The high-resistance silicon layers were formed by the CO+ ion implantation of silicon
substrates and a subsequent annealing at 1100° C. The structural and electric properties of …
substrates and a subsequent annealing at 1100° C. The structural and electric properties of …
Current hysteresis in SOS heterostructures with interlayer silicon oxide
V Antonov, S Tarkov, V Popov - 2020 Joint International …, 2020 - ieeexplore.ieee.org
Silicon-on-sapphire (SOS) substrates with Si and silica nanolayers are investigated
dependening on the silica interlayer thickness. It is shown that nitrogen implantation before …
dependening on the silica interlayer thickness. It is shown that nitrogen implantation before …
Development of the conductivity type inversion caused by thermal double donors' formation in p-type high-resistivity silicon
M Li, Y Liu, T Wei, R Dai, H Wang, Z Xue… - Applied Physics …, 2023 - iopscience.iop.org
Development of the conductivity type inversion caused by thermal double donors' formation in
p-type high-resistivity silicon - IOPscience Skip to content IOP Science home Accessibility Help …
p-type high-resistivity silicon - IOPscience Skip to content IOP Science home Accessibility Help …
SOI technologies for RF and millimeter-wave integrated circuits
JP Raskin - 2021 IEEE Latin America Electron Devices …, 2021 - ieeexplore.ieee.org
Performances of RF and millimeter-wave integrated circuits are directly linked to the analog
and high frequency characteristics of the transistors, the quality of the back-end of line …
and high frequency characteristics of the transistors, the quality of the back-end of line …
SOS pseudo-FeFETs after furnace or rapid annealings and thining by thermal oxidation
VA Antonov, FV Tikhonenko, VP Popov… - Solid-State …, 2024 - Elsevier
The silicon-on-sapphire (SOS) pseudo-MOSFETs with high-k buried hafnium dioxide
interlayer (IL) were investigated after the hydrogen induced Si and HfO 2 layer transfer on c …
interlayer (IL) were investigated after the hydrogen induced Si and HfO 2 layer transfer on c …
GaN-on-Porous Silicon for RF Applications
Gallium nitride (GaN) is a promising semiconductor for RF and high-power applications.
However, its large-scale industrialization is hindered by several challenges, primarily the …
However, its large-scale industrialization is hindered by several challenges, primarily the …