Gallium antimonide (GaSb) has exceptional semiconductor properties, making it a promising
material for various applications, leading to extensive theoretical and experimental studies …

The aim of this paper is to investigate the structural, electronic, optical and elastic properties
of the cubic Al x Ga 1-x Sb ternary alloy with their related binary compounds GaSb and AlSb …

Three topical materials systems are discussed from the point of view of point defect
characterization with positron annihilation spectroscopy. The family of III‐nitride …

In many semiconductors, compensating defects set doping limits, decrease carrier mobility
and reduce minority carrier lifetime thus limiting their utility in devices. Native defects are …

We report on temperature-dependent terahertz spectroscopy of a three-layer
InAs/GaSb/InAs quantum well (QW) with inverted-band structure. The interband optical …

Groups III–V semiconductors have received a great deal of attention because of their
potential advantages for use in optoelectronic and electronic applications. Gallium …

Surface passivation of semiconductor nanowires (NWs) is important for their optoelectronic
properties and applications. Here, the in situ passivation effect of an epitaxial InP shell and …

GaAs 0.51 Sb 0.49 is lattice-matched to InP and finds electron transport applications in base
or absorber layers in high-speed heterostructure bipolar transistors or photodiodes, because …

The presence of defects in the narrow gap semiconductors GaSb and InSb affects their
dopability and hence applicability for a range of optoelectronic applications. Here, we report …

Alloying is one of the most common approaches to modulate the properties of
semiconductors, such as indium antimonide (InSb) with practical applications in mid-infrared …