Enhanced performance of p-type SnO x thin film transistors through defect compensation
Due to the unique outermost orbitals of Sn, hole carriers in tin monoxide (SnO) possess
small effective mass and high mobility among oxide semiconductors, making it a promising p …
small effective mass and high mobility among oxide semiconductors, making it a promising p …
P-type nickel oxide deposited by reactive hollow cathode gas flow sputtering for the potential usage in thin-film transistors
BBO Seibertz, B Szyszka - Thin Solid Films, 2023 - Elsevier
Abstract Thin Nickel Oxide film were deposited by reactive pulsed-direct current hollow
cathode gas flow sputtering. This unique technique allows for sputtering magnetic target …
cathode gas flow sputtering. This unique technique allows for sputtering magnetic target …
TFT Structure Simulation with Various High K Dielectric Materials for Non-volatile Memory Device
K Mukhopadhyaya, P Srividya - Transactions on Electrical and Electronic …, 2024 - Springer
In this rapidly growing and changing world of electronics industry it is very critical to have
precise model and simulation for device. This paper presents the work on simulating the …
precise model and simulation for device. This paper presents the work on simulating the …