Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

L Lv, J Yu, M Hu, S Yin, F Zhuge, Y Ma, T Zhai - Nanoscale, 2021 - pubs.rsc.org
Owing to their superior carrier mobility, strong light–matter interactions, and flexibility at the
atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for …

Vertical transistors based on 2D materials: Status and prospects

F Giannazzo, G Greco, F Roccaforte, SS Sonde - Crystals, 2018 - mdpi.com
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …

Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors

MY Tsai, A Tarasov, ZR Hesabi… - … applied materials & …, 2015 - ACS Publications
Atomically thin molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor
for high-performance flexible electronics, sensors, transducers, and energy conversion …

A multiple negative differential resistance heterojunction device and its circuit application to ternary static random access memory

KH Kim, HY Park, J Shim, G Shin, M Andreev… - Nanoscale …, 2020 - pubs.rsc.org
For increasing the restricted bit-density in the conventional binary logic system, extensive
research efforts have been directed toward implementing single devices with a two …

Multipurpose black-phosphorus/hBN heterostructures

GC Constantinescu, NDM Hine - Nano letters, 2016 - ACS Publications
Black phosphorus (BP) has recently emerged as a promising semiconducting two-
dimensional material. However, its viability is threatened by its instability in ambient …

A potentiometric biosensor for rapid on-site disease diagnostics

A Tarasov, DW Gray, MY Tsai, N Shields… - Biosensors and …, 2016 - Elsevier
Quantitative point-of-care (POC) devices are the next generation for serological disease
diagnosis. Whilst pathogen serology is typically performed by centralized laboratories using …

Programmable Negative Differential Resistance Effects Based on Self‐Assembled Au@ PPy Core–Shell Nanoparticle Arrays

J Zheng, J Zhang, Z Wang, L Zhong, Y Sun… - Advanced …, 2018 - Wiley Online Library
The negative differential resistance (NDR) effect observed in conducting polymer/Au
nanoparticle composite devices is not yet fully clarified due to the random and disordered …

Negative differential resistance transistor with organic p‐n heterojunction

K Kobashi, R Hayakawa, T Chikyow… - Advanced Electronic …, 2017 - Wiley Online Library
Negative differential resistance (NDR) has large potential for versatile device applications,
including high‐frequency oscillators, memories, fast switches, and multilevel logic circuits …

Giant enhancement of cathodoluminescence of monolayer transitional metal dichalcogenides semiconductors

S Zheng, JK So, F Liu, Z Liu, N Zheludev, HJ Fan - Nano letters, 2017 - ACS Publications
Monolayer two-dimensional transitional metal dichalcogenides, such as MoS2, WS2, and
WSe2, are direct band gap semiconductors with large exciton binding energy. They attract …

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe 2

PM Campbell, A Tarasov, CA Joiner, MY Tsai… - Nanoscale, 2016 - pubs.rsc.org
The synthesis of few-layer tungsten diselenide (WSe2) via chemical vapor deposition
typically results in highly non-uniform thickness due to nucleation initiated growth of …