Quantum dots are both excellent single-photon sources and hosts for single spins. This
combination enables the deterministic generation of Raman-photons—bandwidth-matched …

In this submission, we discuss the growth of charge-controllable GaAs quantum dots
embedded in an nip diode structure, from the perspective of a molecular beam epitaxy …

Solar cells based on Al x Ga 1-x As in its direct bandgap range were fabricated and
analyzed. We show that state-of-the-art metalorganic vapor phase epitaxy systems and …

The use of room‐and low‐temperature photoluminescence (PL) spectroscopy for the
assessment of n‐type pseudomorphic AlGaAs/InGaAs/GaAs high‐electron‐mobility …

We report abrupt Te doping of GaInP solar cells grown by molecular beam epitaxy (MBE)
through the use of a low substrate temperature of 420 C and subsequent elimination of …

Fabrication of abrupt In Ga P∕ Ga As heterointerfaces has been difficult using metal organic
vapor phase epitaxy (MOVPE) due to the exchange of P and As during the fabrication steps …

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies are used
to investigate the problems related to GaAs/InGaP/GaAs heterointerfaces grown by metal …

Improvement of efficiency of Al0. 36Ga0. 64As solar cells is advanced in two aspects of
minority-carrier lifetime: reduction of majority-carrier concentration in the emitter and base …

Thickness effects of the InGaAs channel on photoluminescence and transport properties of δ‐
doped Al0. 3Ga0. 7As/In0. 3Ga0. 7As heterostructures are investigated. The spreading of …

Lattice-matched, single and multiple InGaP/GaAs/InGaP quantum wells (QWs) were grown
at 600° C by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE), with the use of …