Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
Incessant downscaling of feature size of multi-gate devices such as FinFETs and gate-all-
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
around (GAA) nanowire (NW)-FETs leads to unadorned effects like short channel effects …
Two dimensional semiconducting materials for ultimately scaled transistors
Two dimensional (2D) semiconductors have been established as promising candidates to
break through the short channel effect that existed in Si metal-oxide-semiconductor field …
break through the short channel effect that existed in Si metal-oxide-semiconductor field …
Design insights of nanosheet FET and CMOS circuit applications at 5-nm technology node
VB Sreenivasulu, V Narendar - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
In this article, FinFET, vertically stacked gate-all-around (GAA) nanowire (NW), and
nanosheet (NS) FETs performance are estimated with equal effective channel widths () at …
nanosheet (NS) FETs performance are estimated with equal effective channel widths () at …
Benchmarking of multi-bridge-channel FETs toward analog and mixed-mode circuit applications
In this study, for the very first time developing of n-and p-type 3-D single-channel (SC)
FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET …
FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET …
Common source amplifier and ring oscillator circuit performance optimization using multi-bridge channel FETs
VB Sreenivasulu, NA Kumari, V Lokesh… - ECS Journal of Solid …, 2023 - iopscience.iop.org
In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is
performed. To enhance power performance co-optimization geometry parameters like NS …
performed. To enhance power performance co-optimization geometry parameters like NS …
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor
J Chen, MY Sun, ZH Wang, Z Zhang, K Zhang… - Nano-Micro Letters, 2024 - Springer
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-
scale manipulation, challenging the conventional limitations of semiconductor materials …
scale manipulation, challenging the conventional limitations of semiconductor materials …
A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology
In this paper, a robust 12T-SRAM memory cell at sub-threshold voltage is designed to
reduce power consumption for low power applications, that in addition to reducing power …
reduce power consumption for low power applications, that in addition to reducing power …
Rotaxane nanomachines in future molecular electronics
As the electronics industry is integrating more and more new molecules to utilize them in
logic circuits and memories to achieve ultra-high efficiency and device density, many …
logic circuits and memories to achieve ultra-high efficiency and device density, many …
Design and performance optimization of junctionless bottom spacer FinFET for digital/analog/RF applications at sub-5nm technology node
Design and Performance Optimization of Junctionless Bottom Spacer FinFET for Digital/Analog/RF
Applications at Sub-5nm Technology Node - IOPscience This site uses cookies. By continuing …
Applications at Sub-5nm Technology Node - IOPscience This site uses cookies. By continuing …
A three-dimensional simulation study of the novel comb-like-channel field-effect transistors for the 5-nm technology node and beyond
X Li, H Zhu, W Gan, W Huang… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
A novel comb-like-channel field-effect transistor (CombFET), which is the combination of the
fin field-effect transistor (FinFET) and nanosheet FET (NshFET) geometries in the channel …
fin field-effect transistor (FinFET) and nanosheet FET (NshFET) geometries in the channel …