In this work, radiation induced damage mechanisms in deep submicron technology is
resolved using finger gated-diodes (FGDs) as a radiation sensitive tool. It is found that these …

An analysis has been carried out for a silicon diffused junction having a back surface field,
with particular reference to the generation of photocurrent. The minority carrier distribution …

Theoretical expressions are derived for both the forward current-induced voltage decay
(FCVD) and the photovoltage decay (PVD) in a base-dominated back-surface field (BSF) …

In this paper, a model for the spectral response of 4-T (4-Transistor) CMOS image sensors in
deep-submicron technology is developed to study the sensor's sensitivity towards γ-ray …

A high voltage pilot-thyristor (4000 V) with amplifying gate, exhibiting light sensitivities of 1...
2 mW under worst case condition is discussed. Since it must deliver large narrow base width …

Assuming the impurity profile to be Gaussian in diffused region, we have found a solution of
the continuity equation which is in simpler form than that of previous work. Considering the …

Photonic injection, as well as the electron beam, is of great use for semiconductor material
and component characterization [l-31. In the meantime, the generation deriving from the …

A bibliography with 621 references is presented on solar batteries. Listings are alphabetical
according to the author's name and all types of solar cells (organic and inorganic) are …