The bias‐stress instability of nanowires (NWs) field‐effect‐transistors (FETs), originated from
the surface trappings, are challenging greatly the functionalization of III‐V group …

Owing to the Fermi pinning effect arose in the metal electrodes deposition process, metal–
semiconductor contact is always independent on the work function, which challenges the …

Self-powered photodetectors (PD) based on ferroelectric materials have gained huge
attention because of the spontaneous polarization and unique photovoltaic effect. However …

Cutting-edge humanoid machine vision merely mimics human systems and lacks
polarimetric functionalities that convey the information of navigation and authentic images …

AgInSe2 is a promising direct bandgap thin-film material with a rare n-type conductivity.
Similar to thin film photovoltaic materials such as Cu (In, Ga) Se2 (CIGSe), which have …

With growing interest in organic phototransistors, as not only sensors but also neuromorphic
computing elements, the vast majority of research investigates structures comprising Ohmic …

InGaAs nanowires (NWs) show tremendous potential as channel materials in the field of
near-infrared photoelectric detections. However, the abundance of surface states on InGaAs …

Owing to the narrow bandgap and excellent optoelectronic properties, III‐Sb nanowires
(NWs) enable efficient optical response from near‐infrared to mid‐infrared, making them …

Aqueous lead monosulfide (PbS) quantum dots (QDs) fabricated by conventional
approaches display poor photodetection performance and unsatisfactory chemical stability …

The power consumption is challenging the next-generation electronic and optoelectronic
devices. In this Letter, the n-type source-gated transistor (SGT) enabled by CdS nanobelt is …