Recent progress in energy, environment, and electronic applications of MXene nanomaterials

RE Ustad, SS Kundale, KA Rokade, SL Patil… - Nanoscale, 2023 - pubs.rsc.org
Since the discovery of graphene, two-dimensional (2D) materials have gained widespread
attention, owing to their appealing properties for various technological applications. Etched …

COVID-19-the role of artificial intelligence, machine learning, and deep learning: a newfangled

DN Vinod, SRS Prabaharan - Archives of Computational Methods in …, 2023 - Springer
The absolute previously infected novel coronavirus (COVID-19) was found in Wuhan, China,
in December 2019. The COVID-19 epidemic has spread to more than 220 nations and …

Promising materials and synthesis methods for resistive switching memory devices: a status review

GU Kamble, AP Patil, RK Kamat, JH Kim… - ACS Applied …, 2023 - ACS Publications
In recent years, the emergence of memory devices, especially resistive random-access
memories (RRAM), has been a front-runner in many technological applications. This is due …

Density functional theory and molecular dynamics simulations for resistive switching research

MA Villena, O Kaya, U Schwingenschlögl… - Materials Science and …, 2024 - Elsevier
Resistive switching (RS) devices, often referred to as memristors, have exhibited interesting
electronic performance that could be useful to enhance the capabilities of multiple types of …

Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing

Z Li, T Wang, J Meng, H Zhu, Q Sun, DW Zhang… - Materials …, 2023 - pubs.rsc.org
The HfO2-based ferroelectric tunnel junction has received outstanding attention owing to its
high-speed and low-power characteristics. In this work, aluminum-doped HfO2 (HfAlO) …

Effect of heterojunction order between CaTiO3 and Mn doped SrTiO3 on memristive performance and its mechanism analysis

Y Yang, Z Cao, S Mao, J Qin, Z Rao, M Liu, C Ke… - Applied Materials …, 2023 - Elsevier
It is well-known that memristive devices can be applied to brain-like parallel computing, but
the interface effects have an indelible impact on memristive performance. In this work, two …

Machine learning empowers efficient design of ternary organic solar cells with PM6 donor

KA Nirmal, TD Dongale, SS Sutar, AC Khot… - Journal of Energy …, 2025 - Elsevier
Organic solar cells (OSCs) hold great potential as a photovoltaic technology for practical
applications. However, the traditional experimental trial-and-error method for designing and …

Revealing the improved stability of amorphous boron-nitride upon carbon doping

O Kaya, L Colombo, A Antidormi, M Lanza… - Nanoscale …, 2023 - pubs.rsc.org
We report on a large improvement of the thermal stability and mechanical properties of
amorphous boron-nitride upon carbon doping. By generating versatile force fields using first …

Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques

SM Patil, SS Kundale, SS Sutar, PJ Patil, AM Teli… - Scientific Reports, 2023 - nature.com
In the present study, various statistical and machine learning (ML) techniques were used to
understand how device fabrication parameters affect the performance of copper oxide …

Intensive harmonized synapses with amorphous Cu 2 O-based memristors using ultrafine Cu nanoparticle sublayers formed via atomically controlled electrochemical …

DS Kim, HW Suh, SW Cho, SY Oh, HH Lee… - Materials …, 2023 - pubs.rsc.org
Resistive random-access memory (RRAM) devices have significant advantages for
neuromorphic computing but have fatal problems of uncontrollability and abrupt resistive …