Reverse side engineered III-nitride devices
Group III-nitride devices are described that include a stack of III-nitride layers, passivation
layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a …
layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a …
Semiconductor devices with field plates
US PATENT DOCUMENTS 4,645,562 A* 2/1987 Liao et al...................... 438,640 4,728,826 A
3/1988 Einzinger et al. 4,821,093 A 4, 1989 Lafrate et al. 4.914489 A 4, 1990 Awano …
3/1988 Einzinger et al. 4,821,093 A 4, 1989 Lafrate et al. 4.914489 A 4, 1990 Awano …
Gallium nitride diodes and integrated components
CS Suh, J Honea, U Mishra - US Patent App. 11/856,695, 2009 - Google Patents
(57) ABSTRACT A diode device can include an enhancement mode gallium nitride
transistor having a gate, a drain and a source, wherein the gate is connected to the drain to …
transistor having a gate, a drain and a source, wherein the gate is connected to the drain to …
Semiconductor heterostructure diodes
Planar Schottky diodes for which the semiconductor material includes a heterojunction
which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is …
which induces a 2DEG in at least one of the semiconductor layers. A metal anode contact is …
Semiconductor devices with guard rings
U Mishra, S Chowdhury, Y Dora - US Patent 8,901,604, 2014 - Google Patents
5,618,384 A 4/1997 Chan et al. 7,892,974 B2 2/2011 Ring et al. 5,646,069 A 7, 1997
Jelloian et al. 7,893,500 B2 2/2011 Wu et al. 5,663,091 A 9, 1997 Yen et al. 7,898,004 B2 …
Jelloian et al. 7,893,500 B2 2/2011 Wu et al. 5,663,091 A 9, 1997 Yen et al. 7,898,004 B2 …
High power semiconductor electronic components with increased reliability
6,727,531 B1 4/2004 Redwing et al. 2003, 0006437 A1 1/2003 Mizuta et al. 6,777,278 B2 8,
2004 Smith 2003/0020092 A1 1/2003 Parikh et al. 6,849,882 B2 2/2005 Chavarkar et al …
2004 Smith 2003/0020092 A1 1/2003 Parikh et al. 6,849,882 B2 2/2005 Chavarkar et al …
Electrode configurations for semiconductor devices
Y Dora, Y Wu - US Patent 8,716,141, 2014 - Google Patents
Abstract A III-N semiconductor device can include an electrode-defining layer having a
thickness on a surface of a III-N material structure. The electrode-defining layer has a recess …
thickness on a surface of a III-N material structure. The electrode-defining layer has a recess …
Enhancement mode gallium nitride power devices
CS Suh, U Mishra - US Patent 8,193,562, 2012 - Google Patents
US8193562B2 - Enhancement mode gallium nitride power devices - Google Patents
US8193562B2 - Enhancement mode gallium nitride power devices - Google Patents …
US8193562B2 - Enhancement mode gallium nitride power devices - Google Patents …
Transistors with isolation regions
U Mishra, S Chowdhury - US Patent 8,742,460, 2014 - Google Patents
4,300,091 A 1 1/1981 Schade, Jr. 4,645,562 A 2f1987 Liao et al. 4,728,826 A 3/1988
Einzinger et al. 4,821,093 A 4, 1989 Lafrate et al. 4.914489 A 4, 1990 Awano 5,051,618 A 9 …
Einzinger et al. 4,821,093 A 4, 1989 Lafrate et al. 4.914489 A 4, 1990 Awano 5,051,618 A 9 …