Single photon emitters in exfoliated WSe2 structures

M Koperski, K Nogajewski, A Arora, V Cherkez… - Nature …, 2015 - nature.com
Crystal structure imperfections in solids often act as efficient carrier trapping centres, which,
when suitably isolated, act as sources of single photon emission. The best known examples …

Spontaneous Emission Enhancement in Strain-Induced WSe2 Monolayer-Based Quantum Light Sources on Metallic Surfaces

LN Tripathi, O Iff, S Betzold, Ł Dusanowski… - ACS …, 2018 - ACS Publications
Atomic monolayers of transition metal dichalcogenides represent an emerging material
platform for the implementation of ultracompact quantum light emitters via strain …

Photoneutralization and slow capture of carriers in quantum dots probed by resonant excitation spectroscopy

HS Nguyen, G Sallen, M Abbarchi, R Ferreira… - Physical Review B …, 2013 - APS
We investigate experimentally and theoretically the resonant emission of single InAs/GaAs
quantum dots in a planar microcavity. Due to the presence of at least one residual charge in …

Systematic study of the emission spectra of nanowire quantum dots

P Laferriere, E Yeung, M Korkusinski, PJ Poole… - Applied Physics …, 2021 - pubs.aip.org
A systematic study of the emission spectra of single InAsP nanowire quantum dots in
position-controlled InP photonic nanowire waveguides is presented. Using excitation power …

Photon correlation spectroscopy of luminescent quantum defects in carbon nanotubes

M Nutz, J Zhang, M Kim, H Kwon, X Wu, YH Wang… - Nano Letters, 2019 - ACS Publications
Defect-decorated single-wall carbon nanotubes have shown rapid growing potential for
imaging, sensing, and the development of room-temperature single-photon sources. The …

Deterministic assembly of a charged-quantum-dot–micropillar cavity device

P Hilaire, C Millet, JC Loredo, C Antón, A Harouri… - Physical Review B, 2020 - APS
Quantum-dot-based spin-photon interfaces are highly sought systems to implement
deterministic photon-photon gates as well as to generate photonic cluster states. This …

Phonon induced line broadening and population of the dark exciton in a deeply trapped localized emitter in monolayer WSe2

YM He, S Höfling, C Schneider - Optics express, 2016 - opg.optica.org
We study trapped single excitons in a monolayer semiconductor with respect to their
temperature stability, spectral diffusion and decay dynamics. In a mechanically exfoliated …

Influence of the quantum dot geometry on -shell transitions in differently charged quantum dots

M Holtkemper, DE Reiter, T Kuhn - Physical Review B, 2018 - APS
Absorption spectra of neutral, negatively, and positively charged semiconductor quantum
dots are studied theoretically. We provide an overview of the main energetic structure …

Mechanism and dynamics of biexciton formation from a long-lived dark exciton in a CdTe quantum dot

T Smoleński, T Kazimierczuk, M Goryca, P Wojnar… - Physical Review B, 2015 - APS
We study the biexciton formation process in a single CdTe/ZnTe quantum dot. Consistently
with previous studies, we find subquadratic dependence of the biexciton photoluminescence …

[HTML][HTML] Excitonic luminescence of iodine-intercalated HfS2

N Zawadzka, T Woźniak, M Strawski… - Applied Physics …, 2023 - pubs.aip.org
Photoluminescence from bulk HfS 2 grown by the chemical vapor transport method is
reported. A series of emission lines is apparent at low temperature in the energy range of 1.4 …