Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

In recent years, several new applications of SiC (both 4H and 3C polytypes) have been
proposed in different papers. In this review, several of these emerging applications have …

Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …

Here, we show that silicon carbide (SiC) complementary logic gates composed of p-and n-
channel junction field-effect transistors (JFETs) fabricated by ion implantation operate at 623 …

In thsi paper a novel optimum variation lateral doping 4H-SiC lateral double-diffused metal
oxide semiconductor (LDMOS) field-effect transistor with improved performance is proposed …

The impact ionization coefficients along the (112̅0) direction in 4H-SiC were extracted by
analyzing photocurrent of mesa epitaxial pn diodes with punchthrough (PT) structures …

Heavily doped 4H-silicon carbide (SiC) epitaxial pn junction diodes are fabricated, and their
tunneling current under reverse-biased condition is investigated. Soft increase of the …

The activation ratio and the ionization energy (ΔE) of sulfur (S) atoms implanted in n-type 4H-
SiC were investigated. It was revealed that implanted sulfur atoms show almost no diffusion …

The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device,
with a simple structure that presents many advantages in terms of device fabrication but also …

Carrier trapping effects of high-concentration deep levels in high-purity semi-insulating
(HPSI) silicon carbide (SiC) substrates on device characteristics were investigated. Vertical …